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L532 PDF预览

L532

更新时间: 2024-02-26 02:14:50
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
2页 47K
描述
IGBT phaseleg in ISOPLUS i4-PAC

L532 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
配置:BRIDGE, HALF-CONTROLLED最大直流栅极触发电流:100 mA
最大直流栅极触发电压:2.5 V快速连接描述:2G-2AK-CA-CK
螺丝端子的描述:0最大维持电流:100 mA
通态非重复峰值电流:300 A最大通态电压:2.2 V
最大通态电流:27000 A最高工作温度:125 °C
最低工作温度:-25 °C重复峰值反向电压:240 V
子类别:Silicon Controlled RectifiersBase Number Matches:1

L532 数据手册

 浏览型号L532的Datasheet PDF文件第2页 
FII 30-06D  
IC25  
VCES  
= 30 A  
= 600 V  
IGBT phaseleg  
in ISOPLUS i4-PACTM  
VCE(sat)typ. = 1.9 V  
3
Preliminary data  
5
4
1
1
2
5
Features  
IGBTs  
• NPTIGBT  
Symbol  
VCES  
Conditions  
Maximum Ratings  
- low saturation voltage  
- positive temperature coefficient for  
easy paralleling  
TVJ = 25°C to 150°C  
600  
20  
V
- fast switching  
VGES  
V
• HiPerFREDTM diode  
IC25  
IC90  
TC = 25°C  
TC = 90°C  
30  
18  
A
A
- optimized fast and soft reverse  
recovery  
- low operating forward voltage  
- low leakage current  
ICM  
VCEK  
VGE = 15 V; RG = 47 ; TVJ = 125°C  
40  
VCES  
A
µs  
W
RBSOA, Clamped inductive load; L = 100 µH  
• ISOPLUS i4-PACTM package  
- isolated back surface  
- low coupling capacity between pins  
and heatsink  
tSC  
(SCSOA)  
VCE = VCES; VGE = 15 V; RG = 47 ; TVJ = 125°C  
non-repetitive  
10  
Ptot  
TC = 25°C  
100  
- enlarged creepage towards heatsink  
- application friendly pinout  
- low inductive current path  
- high reliability  
- industry standard outline  
- UL registered E 72873  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
VCE(sat)  
IC = 20 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
1.9  
2.2  
2.4  
V
V
Applications  
• single phaseleg  
- buck-boost chopper  
• H bridge  
- power supplies  
- induction heating  
- four quadrant DC drives  
- controlled rectifier  
• three phase bridge  
- AC drives  
VGE(th)  
ICES  
IC = 0.5 mA; VGE = VCE  
4.5  
6.5  
V
VCE = VCES;VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
0.6 mA  
mA  
0.6  
IGES  
VCE = 0 V; VGE  
=
20 V  
200 nA  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
50  
55  
300  
30  
0.92  
0.68  
ns  
ns  
ns  
ns  
mJ  
mJ  
Inductive load, TVJ = 125°C  
VCE = 300 V; IC = 20 A  
VGE = 15 V; RG = 47 Ω  
- controlled rectifier  
Cies  
QGon  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE = 300 V; VGE = 15 V; IC = 20 A  
1.1  
65  
nF  
nC  
RthJC  
RthJH  
1.25 K/W  
K/W  
with heat transfer paste  
2.5  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2004 IXYS All rights reserved  
1 - 2  
IXYS Semiconductor GmbH  
IXYS Corporation  
Edisonstr. 15,  
Phone: +49-6206-503-0, Fax: +49-6206-503627  
D-68623 Lampertheim  
3540 Bassett Street, Santa Clara CA 95054  
Phone: (408) 982-0700, Fax: 408-496-0670  

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