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KST2222AMTF PDF预览

KST2222AMTF

更新时间: 2024-01-25 02:22:53
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管晶体管
页数 文件大小 规格书
6页 280K
描述
NPN 外延硅晶体管

KST2222AMTF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:3.56
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
最大关闭时间(toff):285 ns最大开启时间(吨):35 ns
Base Number Matches:1

KST2222AMTF 数据手册

 浏览型号KST2222AMTF的Datasheet PDF文件第1页浏览型号KST2222AMTF的Datasheet PDF文件第3页浏览型号KST2222AMTF的Datasheet PDF文件第4页浏览型号KST2222AMTF的Datasheet PDF文件第5页浏览型号KST2222AMTF的Datasheet PDF文件第6页 
October 2014  
KST2222A  
NPN Epitaxial Silicon Transistor  
Features  
3
• General-Purpose Transistor  
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
Ordering Information  
Part Number  
Marking  
Package  
Packing Method  
KST2222AMTF  
1P  
SOT-23 3L  
Tape and Reel  
Absolute Maximum Ratings  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
75  
40  
V
6
V
600  
mA  
°C  
TSTG  
Storage Temperature Range  
-55 to +150  
Thermal Characteristics(1)  
Values are at TA = 25°C unless otherwise noted.  
Symbol  
PD  
Parameter  
Value  
350  
Unit  
mW  
Power Dissipation  
Derate Above 25°C  
2.8  
mW/°C  
°C/W  
RθJA  
Thermal Resistance, Junction-to-Ambient  
357  
Note:  
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.  
© 2002 Fairchild Semiconductor Corporation  
KST2222A Rev. 1.1.0  
www.fairchildsemi.com  

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