是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | SOT-23 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 3.56 |
最大集电极电流 (IC): | 0.6 A | 集电极-发射极最大电压: | 40 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 40 |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.35 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 300 MHz |
最大关闭时间(toff): | 285 ns | 最大开启时间(吨): | 35 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
KST2222AMTF_NL | FAIRCHILD | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, |
获取价格 |
|
KST2222ATF | SAMSUNG | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, |
获取价格 |
|
KST2222A-TF | SAMSUNG | 600mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR |
获取价格 |
|
KST2222ATI | SAMSUNG | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, |
获取价格 |
|
KST2222ATR | SAMSUNG | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, |
获取价格 |
|
KST2222D87Z | FAIRCHILD | Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon |
获取价格 |