Datasheet > KSD526_06

KSD526_06

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
4页	185K
描述
NPN Epitaxial Silicon Transistor

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KSD526_06 数据手册

April 2006

KSD526

NPN Epitaxial Silicon Transistor

Power Amplifier Applications

•

Complement to KSB596

TO-220

1.Base 2.Collector 3.Emitter

Absolute Maximum Ratings *

= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

Collector-Base Voltage

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

I_B

Base Current

0.4

Collector Dissipation ( T_C=25°C)

Junction Temperature

Storage Temperature

°C

T_J

150

-55~150

T_STG

* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

Electrical Characteristics

T = 25°C unless otherwise noted

Symbol

I_CBO

Parameter

Collector Cut-off Current

Emitter Cut-off Current

Test Condition

MIN

MAX MAX Units

V_CB= 80V, I_E= 0

μA

I_EBO

V_EB= 5V, I_C= 0

I_C= 50mA, I_B= 0

I_E= 10mA, I_C= 0

100

BV_CEO

BV_EBO

hFE

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

V_CE= 5V, I_C= 0.5A

V_CE= 5V, I_C= 3A

240

0.45

VCE(sat)

VBE(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

I_C= 3A, I_B= 0.3A

1.5

V_CE= 5V, I_C= 3A

Current Gain - Bandwidth Product

Collector Output Capacitance

V_CE= 5V, I_C= 0.5A

V_CB= 10V, I_E= 0, f = 1MHz

MHz

Ccb

Classification

h_FE

40∼80

70∼140

120∼240

KSD526 Rev. A1

www.fairchildsemi.com

12 3 4

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