Datasheet > KSC3073OTU

KSC3073OTU

更新时间： 2025-08-27 19:02:07

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	40K
描述
TRANS NPN 30V 3A I-PAK

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数据手册

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KSC3073OTU 数据手册

KSC3073

Power Amplifier Application

•

Complement to KSA1243

I-PAK

1. Base 2. Collector 3. Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

CEO

EBO

Base Current

0.6

Collector Dissipation (T =25°C)

°C

Collector Dissipation (T =25°C)

Junction Temperature

Storage Temperature

150

- 55 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

Test Condition

Min.

Typ.

Max.

Units

= 10mA, I = 0

CEO

EBO

I = 1mA, I = 0

= 20V, I = 0

µA

CBO

EBO

= 5V, I = 0

DC Current Gain

= 2V, I = 0.5A

240

FE1

FE2

= 2V, I = 2.5A

(sat)

(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

= 2A, I = 0.2A

0.3

0.75

100

0.8

= 2V,I = 0.5A

Current Gain Bandwidth Product

Output Capacitance

= 2V, I = 0.5A

MHz

= 10V, f =1MHz

Classification

70 ~ 140

120 ~ 240

FE1

Rev. B, September 2002

12 3 4

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