Datasheet > KP1510-68

KP1510-68

更新时间： 2024-03-03 10:09:28

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
3页	235K
描述
T15D

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KP1510-68 数据手册

Jiangsu Yangjie Runau Semiconductor Co., Ltd

ELECTRICAL CHARACTERISTICS AND RATINGS

KP1510-POWER THYRISTOR

Gating

Parameter

Symbol

P_GM

Min.

Max.

Typ.

Units Conditions

Peak gate power dissipation

Average gate power dissipation

Gate-trigger current

P_G(AV)

I_GT

300

3.0

V_D=12 V;R_L= 3 ohms;T_j= +25 ^oC

V_D= 12 V;R_L= 3 ohms;T_j= +25 ^oC

Gate- trigger voltage

Peak negative voltage

V_GT

0.8

V_GRM

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units Conditions

Delay time

t_d

3.0

s

I_FG=2.0A; V_D=0.4V_DRM; t_r=0.5s

I_TM=1000 A; di/dt =- 10A/s;

V_R=100 V; dV/dt=30V/s ;

V_D= 67%V_DRM;T_j=115^oC

I_TM=1000A；di/dt=-1 A/s;

V_R=100 V; T_j=115℃

Turn-off time (with V_R= -5 V)

t_q

800

Reverse recovery charge

Q_rr

2000

C

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

T_j

Min.

-40

Max.

+115

Typ.

Units

^oC

Conditions

Operating temperature

Storage temperature

T_stg

-40

+140

0.008

0.002

^oC

Thermal resistance - junction to

case

R_{Θ (j-c)}

R_{Θ (c-s)}

^oC/W Double sided cooled

Thermal resistance - case to

heatsink

Mounting force

Weight

1.85

* Mounting surfaces smooth, flat and greased

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