Datasheet > KMM5364003BSWG

KMM5364003BSWG

更新时间： 2022-11-26 03:28:19

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
18页	353K
描述
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

KMM5364003BSWG 数据手册

DRAM MODULE

KMM5364003BSW/BSWG

KMM5364003BSW/BSWG Fast Page Mode

4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V

GENERAL DESCRIPTION

FEATURES

The Samsung KMM5364003B is a 4Mx36bits Dynamic RAM

high density memory module. The Samsung KMM5364003B

consists of two CMOS 4Mx16bits and one CMOS Quad CAS

4Mx4bits DRAMs in TSOP packages mounted on a 72-pin

glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor

is mounted on the printed circuit board for each DRAM. The

KMM5364003B is a Single In-line Memory Module with edge

connections and is intended for mounting into 72 pin edge

connector sockets.

• Part Identification

- KMM5364003BSW(4K cycles/64ms Ref, TSOP, Solder)

- KMM5364003BSWG(4K cycles/64ms Ref, TSOP, Gold)

• Fast Page Mode Operation

• CAS-before-RAS & Hidden Refresh capability

• RAS-only refresh capability

• TTL compatible inputs and outputs

• Single +5V±10% power supply

• JEDEC standard PDpin & pinout

PERFORMANCE RANGE

• PCB : Height(1000mil), single sided component

Speed

-5

tRAC

50ns

60ns

tCAC

13ns

15ns

tRC

tPC

90ns

110ns

35ns

40ns

-6

PIN CONFIGURATIONS

PIN NAMES

Symbol

Pin Name

A0 - A11

DQ0 - 35

Function

Address Inputs

Data In/Out

VSS

DQ0

DQ18

DQ1

DQ19

DQ2

DQ20

DQ3

DQ21

Vcc

A10

DQ4

DQ22

DQ5

DQ23

DQ6

DQ24

DQ7

DQ25

DQ17

DQ35

Vss

CAS0

CAS2

CAS3

CAS1

RAS0

Read/Write Enable

Row Address Strobe

Column Address Strobe

Presence Detect

Power(+5V)

RAS0, RAS2

CAS0 - CAS3

PD1 -PD4

Vcc

DQ9

DQ27

DQ10

DQ28

DQ11

DQ29

DQ12

DQ30

DQ13

DQ31

Vcc

DQ32

DQ14

DQ33

DQ15

DQ34

DQ16

Vss

Ground

No Connection

PRESENCE DETECT PINS (Optional)

50NS

60NS

PD1

PD2

PD3

PD4

Vss

A11

Vcc

RAS2

DQ26

DQ8

PD1

PD2

PD3

PD4

Vss

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

12 3 4 5 6 7...18

下载PDF

与KMM5364003BSWG相关器件

型号	品牌	描述	获取价格	数据表
KMM5364003BSWG-5	SAMSUNG	Fast Page DRAM Module, 4MX36, 50ns, CMOS, SIMM-72	获取价格
KMM5364003CK	SAMSUNG	4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V	获取价格
KMM5364003CK-5	SAMSUNG	Fast Page DRAM Module, 4MX36, 50ns, CMOS, DIMM-72	获取价格
KMM5364003CKG	SAMSUNG	4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V	获取价格
KMM5364003CKG-5	SAMSUNG	Fast Page DRAM Module, 4MX36, 50ns, CMOS, DIMM-72	获取价格
KMM5364003CKG-6	SAMSUNG	Fast Page DRAM Module, 4MX36, 60ns, CMOS, DIMM-72	获取价格