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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| KM44S64230AT-F8 | SAMSUNG |
获取价格 |
Synchronous DRAM, 64MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TS |
|
| KM44S64230AT-FA | SAMSUNG |
获取价格 |
Synchronous DRAM, 64MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
|
| KM44S64230AT-FH | SAMSUNG |
获取价格 |
Synchronous DRAM, 64MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TS |
|
| KM44S64230AT-FL | SAMSUNG |
获取价格 |
Synchronous DRAM, 64MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TS |
|
| KM44S64230AT-G10 | SAMSUNG |
获取价格 |
Synchronous DRAM, 64MX4, 7ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TS |
|
| KM44S64230AT-GA | SAMSUNG |
获取价格 |
Synchronous DRAM, 64MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
|
| KM44S64230AT-GH | SAMSUNG |
获取价格 |
Synchronous DRAM, 64MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TS |
|
| KM44S64230AT-GL | SAMSUNG |
获取价格 |
Synchronous DRAM, 64MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TS |
|
| KM44V1000BLLJ-7 | SAMSUNG |
获取价格 |
Fast Page DRAM, 1MX4, 70ns, CMOS, PDSO20, PLASTIC, SOJ-26/20 |
|
| KM44V1000BLLP-8 | SAMSUNG |
获取价格 |
Fast Page DRAM, 1MX4, 80ns, CMOS, PDIP20, PLASTIC, DIP-20 |
|
SK海力士量产12层HBM3E，容量高达36GB
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
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贸泽上架Tallysman TW5386智能GNSS天线
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