0�
100� 200� 300� 400� 0�20�40�60�80100�120�
(
PK PD,PE,KK 160F
)
Gate Characteristics
On-State Voltage max
2�
2�
Peak Forward Gate Voltage(10V)�
1�
10
3
10
5�
5�
2�
2�
0�
10
2
10
5�
5�
125℃�25℃� -30℃�
Maximum Gate Voltage that will not trigger any unit
2�
2�
-
1�
101�
10
1�
2�
3�
0.5�
1.0�
1.5� � 2.0�
2.5�
3.0�
10
2�
5� 10
2�
5� 10
2�
5�
Gate Curren(t mA)�
On-State Voltage(V)�
Average On-State Current Vs Power Dissipation�
(Single phase half wave)
Average On-State Current Vs Maximum Allowable�
Case Temperature(Single phase half wave)
130�
350�
Per one element
Per one element
D.C.
120�
110�
100�
300�
250�
200�
2
360。�
θ=180゜�
θ=120゜�
: Conduction Angle
θ=90゜�
θ=60゜�
90�
80�
70�
60�
50�
150�
100�
2
θ=30゜�
360。�
: Conduction Angle
D.C.
θ=60゜�
θ=90゜�θ=120゜�θ=180゜�
θ=30゜�
50�
0�
300�
0�
50�
100�
150� 200� 250�
300�
0�
50�
100�
150� 200� 25�0�
Average On-State Curren(t A)�
Average On-State Curren(t A)�
Surge On-State Current Rating�
(Non-Repetitive)�
Transient Thermal Impedance
0.2�
6000�
5000�
4000�
3000�
Per one element
Tj=25℃ start
Per one element
Junction to case
60Hz
50Hz
0.1�
2000�
1000�
0�
0� 0�
10
-
-
-
0�
1
103�
102�
101�
10
10
1�
2�
2�
5�
10
2�
5�
10
�
Time t(sec)�
Time(cycles)�
B6;Six pulse bridge connection�
W3;Three phase�
Output Current
W1;Bidirectional connection
bidiretional connection
B2;Two Pluse bridge connection
W3
Conduction Angle 180゜�
1200�
B6
Id(Ar.m.s.)�
Id(Aav.)�
90�
Id(Aav.)�
Id(Ar.m.s.)�
1000�
800�
600�
400�
200�
Rth:0.5℃/W
B2
Rth:0.4℃/W
Rth:0.3℃/W
Rth:0.2℃/W
Rth:0.1℃/W
Rth:0. 0 5℃/W
100�
110�
90�
Rth:0.5℃/W
Rth:0.4℃/W
Rth:0.3℃/W
Rth:0.5℃/W
Rth:0.4℃/W
Rth:0.3℃/W
Rth:0.2℃/W 100�
W1
Rth:0.1℃/W
Rth:0. 0 5℃/W
Rth:0.2℃/W
90�
Rth:0.1℃/W
Rth:0. 0 5℃/W
100�
110�
120�
125�
110�
120�
125�
120�
125�
0� 20�40�60�80�100�120�
0� 20�40�60�80�100�20�
Output Curren(t A)�
Ambient Temperature(℃)�
Ambient Temperature(℃)�Ambient Temperature(℃)�