Datasheet > KF9N40D

KF9N40D

更新时间： 2025-07-26 01:15:43

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
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描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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KF9N40D 数据手册

KF9N40D

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for LED Convertor and

switching mode power supplies.

DIM MILLIMETERS

6.60 + 0.20

6.10+0.20

5.34 + 0.30

0.70+0.20

2.70 + 0.15

2.30+0.10

FEATURES

0.96 MAX

0.90 MAX

· V_DSS(Min.)= 400V, I_D= 6.5A

· Drain-Source ON Resistance : R_DS(ON)=0.83Ω (max) @V_GS=10V

· Qg(typ.) =13 nC

1.80+0.20

2.30+0.10

0.50 + 0.10

0.50+0.10

0.70 MIN

0.1 MAX

MAXIMUM RATING (Tc=25℃)

1. GATE

2. DRAIN

3. SOURCE

CHARACTERISTIC

Drain-Source Voltage

Gate-Source Voltage

@T_C=25℃

SYMBOL

V_DSS

RATING

400

UNIT

V_GSS

±30

6.5

DPAK (1)

I_D

Drain Current

@T_C=100℃

4.1

I_DP

Pulsed (Note1)

18*

Single Pulsed Avalanche Energy

(Note 2)

Repetitive Avalanche Energy

(Note 1)

Peak Diode Recovery dv/dt

(Note 3)

E_AS

140

3.9

4.5

E_AR

dv/dt

V/ns

T_C=25℃

0.63

W/℃

℃

Drain Power

Dissipation

P_D

Derate above25℃

T_j

Maximum Junction Temperature

Storage Temperature Range

150

T_stg

-55∼ 150

℃

Thermal Characteristics

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

1.6

℃/W

Thermal Resistance, Junction-to-

Ambient

110

* : Drain current limited by maximum junction temperature.

PIN CONNECTION

2013. 8. 30

Revision No : 0

1/6

12 3 4 5 6

中文翻译

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