Datasheet > KF16N50P

KF16N50P

更新时间： 2024-10-01 05:40:51

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
7页	80K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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KF16N50P 数据手册

KF16N50P/F

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

KF16N50P

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for active power factor

correction and switching mode power supplies.

DIM MILLIMETERS

9.9 + 0.2

15.95 MAX

1.3+0.1/-0.05

0.8 + 0.1

FEATURES

3.6 0.2

V_DSS=500V, I_D=16A

Drain-Source ON Resistance :

2.8 + 0.1

3.7

0.5+0.1/-0.05

1.5

R_DS(ON)(Max)=0.36

Qg(typ.)= 40.8nC

@V_GS=10V

13.08 + 0.3

1.46

1.4 0.1

MAXIMUM RATING (Tc=25

)

1.27 0.1

2.54 0.2

RATING

4.5 0.2

CHARACTERISTIC

SYMBOL

UNIT

2.4 0.2

9.2 +0.2

1. GATE

2. DRAIN

3. SOURCE

KF16N50P

KF16N50F

V_DSS

V_GSS

Drain-Source Voltage

Gate-Source Voltage

@T_C=25

500

TO-220AB

9.7

16*

9.7*

45*

I_D

Drain Current

@T_C=100

KF16N50F

I_DP

Pulsed (Note1)

Single Pulsed Avalanche Energy

(Note 2)

E_AS

870

22.5

4.5

Repetitive Avalanche Energy

(Note 1)

E_AR

DIM MILLIMETERS

10.16 0.2

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

V/ns

15.87 0.2

2.54 0.2

0.8 0.1

225

Tc=25

Drain Power

Dissipation

P_D

3.18

0.1

1.78

0.41

3.3 0.1

Derate above 25

12.57 0.2

T_j

Maximum Junction Temperature

Storage Temperature Range

150

0.5 0.1

13.0 0.5

T_stg

-55 150

3.23 0.1

1.47 MAX

Thermal Characteristics

2.54 0.2

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

0.58

62.5

2.43

62.5

6.68 0.2

Thermal Resistance,

Junction-to-Ambient

4.7

0.2

1. GATE

2. DRAIN

3. SOURCE

2.76 0.2

* : Drain current limited by maximum junction temperature.

TO-220IS (1)

PIN CONNECTION

2008. 10. 2

Revision No : 1

1/7

12 3 4 5 6 7

中文翻译

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