Datasheet > KF19N20D

KF19N20D

更新时间： 2024-05-23 22:22:06

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
6页	1066K
描述
DPAK(1)

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KF19N20D 数据手册

KF19N20D

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for LED Lighting and

switching mode power supplies.

DIM MILLIMETERS

6.60 + 0.20

6.10+0.20

5.34 + 0.30

0.70+0.20

2.70 + 0.15

2.30+0.10

0.96 MAX

0.90 MAX

FEATURES

1.80+0.20

0.76+0.20

2.30+0.10

•

V_DSS(Min.)= 200V, I_D= 15A

0.50 + 0.10

0.50+0.10

•

Drain-Source ON Resistance : R_DS(ON)=0.155Ω(max) @V_GS=10V

0.70 MIN

2.4 0.2

•

Qg(typ.) =21nC

5.0 0.2

1.75 0.3

5.0 0.3

•

Suffix U : Qualified to AEC-Q101.

5.34 0.3

0.27 0.05

0.77 0.1

2.0 0.1

ex) KF19N20D-RTF/HSU

1. GATE

2. DRAIN

3. SOURCE

MAXIMUM RATING (Tc=25

)

CHARACTERISTIC

Drain-Source Voltage

Gate-Source Voltage

@T_C=25

SYMBOL

V_DSS

RATING

200

UNIT

DPAK (1)

V_GSS

I_D

Drain Current

@T_C=100

9.4

45*

I_DP

Pulsed (Note1)

Single Pulsed Avalanche Energy

(Note 2)

Repetitive Avalanche Energy

(Note 1)

Peak Diode Recovery dv/dt

(Note 3)

E_AS

215

4.9

4.5

DIM

MILLIMETERS

E_AR

6.60+0.1

6.1+0.1

5.33 0.2

dv/dt

V/ns

1.1 0.2

2.90 REF

T_C=25

83.3

0.67

150

Drain Power

2.286 0.1

P_D

0.9 Max.

Dissipation

Derate above25

2.3 0.1

5.25 Min

T_j

Maximum Junction Temperature

Storage Temperature Range

0.5+0.1

4.70 Min

0.508 BSC

0.75 Max

T_stg

-55 150

Thermal Characteristics

1.5 0.2

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

1.5

Thermal Resistance, Junction-to-

Ambient

1. GATE

2. DRAIN

3. SOURCE

110

* : Drain current limited by maximum junction temperature.

DPAK (3)

PIN CONNECTION

2022. 03. 30

Revision No : 5

1/6

12 3 4 5 6

中文翻译

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