5秒后页面跳转
KBU8D PDF预览

KBU8D

更新时间: 2024-02-17 08:45:18
品牌 Logo 应用领域
固锝 - GOOD-ARK 二极管
页数 文件大小 规格书
2页 175K
描述
SINGLE-PHASE SILICON BRIDGE

KBU8D 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
Base Number Matches:1

KBU8D 数据手册

 浏览型号KBU8D的Datasheet PDF文件第2页 
KBU4,6,8/RS6 SERIES  
SINGLE-PHASE SILICON BRIDGE  
Reverse Voltage -  
Forward Current -  
4.0/6.0/8.0 Amperes  
50 to 1000 Volts  
Features  
Ideal for printed circuit board  
Reliable low cost construction utilizing molded  
plastic technique  
Plastic material has Underwriters Laboratory  
Flammability Classification 94V-0  
Surge overload rating: 200 amperes peak  
Mounting Position: Any  
Mounting Torgue: 5 ln. Ib. max.  
D IM E N S IO N S  
inches  
m m  
D IM  
N ote  
M in.  
-
M ax.  
0.760  
-
M in.  
-
M ax.  
19.3  
-
A
B
1.0  
25.4  
22.7  
6.6  
C
D
E
0.895  
0.260  
0.165  
0.140  
0.065  
0.660  
0.405  
0.180  
0.180  
0.185  
0.048  
0.935  
0.280  
0.185  
0.160  
0.085  
0.700  
0.455  
0.260  
0.220  
0.205  
0.052  
23.7  
7.1  
4.2  
4.7  
F
3.6  
4.1  
G
H
H 1  
J
1.7  
2.2  
16.8  
10.3  
4.5  
17.8  
11.3  
6.6  
K
4.6  
5.6  
M
N
P
4.7  
5.2  
1.2  
1.3  
0.075 (1.9) R . Typ. (2 P laces)  
45O  
Q
Maximum Ratings and Electrical Characteristics  
Ratings at 25 ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.  
For capacitive load, derate current by 20%.  
KBU4A KBU4B KBU4D KBU4G KBU4J KBU4K KBU4M  
KBU6A KBU6B KBU6D KBU6G KBU6J KBU6K KBU6M  
KBU8A KBU8B KBU8D KBU8G KBU8J KBU8K KBU8M  
Symbols  
Units  
RS601  
RS602  
RS603  
RS604  
RS605  
RS606  
RS607  
1000  
700  
Maximum repetitive peak reverse voltage  
Maximum RMS bridge input voltage  
Maximum DC blocking voltage  
V
50  
100  
200  
400  
600  
800  
Volts  
Volts  
Volts  
RRM  
V
35  
70  
140  
280  
420  
560  
RMS  
VDC  
50  
100  
200  
400  
600  
800  
1000  
Maximum average forward  
rectified output current at  
T =100  
4.0  
4.0  
6.0  
6.0  
8.0  
6.0  
TC=65 /40 /45  
I
Amps  
Amps  
Volt  
(AV)  
A
Peak forward surge current, 8.3mS single half sine-wave  
superimposed on rated load  
(MIL-STD-750 method 4066)  
I
200.0  
1.0  
250.0  
1.0  
300.0  
1.0  
FSM  
KBU6  
RS6  
KBU4  
KBU8  
/
Maximum instantanous forward Voltage drop per  
element at 3.0A/3.0A/8.0A  
V
F
Maximum DC reverse leakage at rated  
DC blocking voltage per element  
T =25  
10.0  
100.0  
10.0  
200.0  
10.0  
300.0  
uA  
mA  
TA=100  
I
R
C
Operating and storage temperature range  
T , T  
-65 to +150  
J
STG  
1

与KBU8D相关器件

型号 品牌 描述 获取价格 数据表
KBU8DE4 VISHAY DIODE 6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE KBU, 4 PIN, Br

获取价格

KBU8D-E4/51 VISHAY Single-Phase Bridge Rectifier

获取价格

KBU8DP MCC DIODE 8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, KBU, 4 PIN, Bridge Rectifier D

获取价格

KBU8DPT CHENMKO SILICON BRIDGE RECTIFIER

获取价格

KBU8G BL Galaxy Electrical SILICON BRIDGE RECTIFIERS

获取价格

KBU8G KISEMICONDUCTOR 8 Amp Single Phase Bridge Rectifier 50 to 1000 Volts

获取价格