KBU8D

更新时间： 2024-01-08 12:09:32

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		整流二极管桥式整流二极管
页数	文件大小	规格书
3页	33K
描述
8.0 Ampere Silicon Bridge Rectifiers

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技术参数
数据手册

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KBU8D 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.84
Base Number Matches：	1

KBU8D 数据手册

Discr ete P OWER & Sign a l

Tech n ologies

KBU8A - KBU8M

0.935(23.7)

0.280(7.1)

0.895(22.7)

0.260(6.6)

0.16(4.1)

0.14(3.6)

0.085(2.2)

0.065(1.7)

Features

45°

0.70(17.8)

0.66(16.8)

• High surge current capability.

• Reliable construction technique.

• Ideal for printed circuit board.

0.0760(19.3)

MAX

0.455(11.3)

0.405(10.3)

–

0.165(4.2)

0.150(3.8)

1.0(2.54)

MIN

KBU

0.260(6.8)

0.180(4.5)

0.220(5.6)

0.180(4.6)

0.052(1.3)

0.048(1.2)

8.0 Ampere Silicon Bridge Rectifiers

Dimensions are in: inches (mm)

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

I_O

Average Rectified Current

8.0

@ T = 50 C

Peak Forward Surge Current

300

6.9

i_f(surge)

P_D

Total Device Dissipation

Derate above 25 C

mW/ C

Thermal Resistance, Junction to Ambient,** per leg

Thermal Resistance, Junction to Lead,** per leg

Storage Temperature Range

R_θ

C/W

3.0

R_θ

C/W

-55 to +150

T_stg

T_J

Operating Junction Temperature

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

**Device mounted on PCB with 0.375 " (9.5 mm) lead length and 0.5 x 0.5" (13 x 13 mm) copper pads.

Electrical Characteristics

T_A= 25°C unless otherwise noted

Parameter

Device

Units

100

400

280

400

Peak Repetitive Reverse Voltage

200

140

200

600

420

600

800

560

800

1000

700

Maximum RMS Bridge Input Voltage

100

1000

DC Reverse Voltage

Maximum Reverse Leakage,

total bridge @ rated V_RT = 25 C

(Rated V_R)

500

T = 100 C

Maximum Forward Voltage Drop,

per bridge

@ 8.0 A

1.0

KBU8A-KBU8M, Rev.

1999 Fairchild Semiconductor Corporation

12 3

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