Silicon Bridge Rectifiers
KBU8005-G Thru. KBU810-G
Reverse Voltage: 50 to 1000V
Forward Current: 8.0A
RoHS Device
KBU
Features
0.15ΦX23L
(3.8ΦX5.7L)
HOLE THRU
0.157(4.0)*45°
-Surge overload rating - 200 amperes peak.
-Ideal for printed circuit board.
0.935(23.7)
0.895(22.7)
300
(7.5)
-Plastic material has U/L flammability
classification 94V-0
0.700(17.8)
0.600(16.8)
0.780(19.8)
0.740(18.8)
Mechanical Data
1.00
(25.4)
MIN.
0.052(1.3)DIA.
0.048(1.2)TYP.
-Case: Molded plastic, KBU
-Mounting position: Any
-Weight: 7.40grams
.087(2.2)
.071(1.8)
0.220(5.6)
0.180(4.6)
0.276(7.0)
0.256(6.5)
Dimensions in inches and (millimeter)
Maximum ratings and electrical characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
KBU
8005-G
KBU
801-G
KBU
802-G
KBU
804-G
KBU
806-G
KBU
808-G
KBU
810-G
Symbol
Parameter
Unit
Maximum Recurrent Peak Reverse Voltage
V
RRM
RMS
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
V
Maximum RMS Voltage
V
DC
100
1000
Maximum DC Blocking Voltage
Maximum Average Forward
I(AV)
8.0
200
1.0
A
A
V
Rectified Output Current
@Tc=100°C
Peak Forward Surge Current 8.3ms single
Half Sine-Wave Super Imposed on Rated Load
(JEDEC Method)
IFSM
Maximum Instantanous Forward Voltage Drop
per Element at 4.0A
V
F
@TJ=25°C
@TJ=100°C
Maximum Reverse Leakage Current
At Rate DC Blocking Voltage
10
300
μA
IR
Typical Junction Capacitance Per Element (Note1)
Operating Temperature Range
Storage Temperature Range
Notes:
pF
C
J
250
-55 to +125
-55 to +150
°C
°C
TJ
TSTG
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Company reserves the right to improve product design , functions and reliability without notice.
REV: A
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QW-BBR79
Comchip Technology CO., LTD.