5秒后页面跳转
KBU1007GT0G PDF预览

KBU1007GT0G

更新时间: 2024-09-26 01:14:59
品牌 Logo 应用领域
TSC 局域网二极管
页数 文件大小 规格书
4页 205K
描述
Glass Passivated Bridge Rectifiers

KBU1007GT0G 技术参数

生命周期:Obsolete包装说明:R-PSFM-W4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.73
其他特性:UL RECOGNIZED最小击穿电压:1000 V
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PSFM-W4最大非重复峰值正向电流:200 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大重复峰值反向电压:1000 V
表面贴装:NO端子形式:WIRE
端子位置:SINGLEBase Number Matches:1

KBU1007GT0G 数据手册

 浏览型号KBU1007GT0G的Datasheet PDF文件第2页浏览型号KBU1007GT0G的Datasheet PDF文件第3页浏览型号KBU1007GT0G的Datasheet PDF文件第4页 
KBU1001G thru KBU1007G  
Taiwan Semiconductor  
CREAT BY ART  
Glass Passivated Bridge Rectifiers  
FEATURES  
- Glass passivated junction  
- Ideal for printed circuit board  
- High case dielectric strength  
- Typical IR less than 0.1μA  
- High surge current capability  
- UL Recognized File # E-326243  
- Compliant to RoHS Directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
- Halogen-free according to IEC 61249-2-21 definition  
KBU  
MECHANICAL DATA  
Case: KBU  
Molding compound, UL flammability classification rating 94V-0  
Base P/N with suffix "G" on packing code - green compound (halogen-free)  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 1A whisker test  
Mounting torque: 0.56 Nm max.  
Weight: 7.2 g (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)  
KBU  
KBU  
KBU  
KBU  
KBU  
KBU  
KBU  
PARAMETER  
SYMBOL  
Unit  
1001G 1002G 1003G 1004G 1005G 1006G 1007G  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
10  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current  
IF(AV)  
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
I2t  
200  
166  
A
A2s  
Rating for fusing (t<8.3ms)  
Maximum instantaneous forward voltage (Note 1)  
IF= 5 A  
IF= 10 A  
VF  
1.0  
1.1  
V
Maximum DC reverse current  
at rated DC blocking voltage  
TJ=25 oC  
TJ=125 oC  
5
500  
IR  
μA  
Typical junction capacitance per leg  
400  
Cj  
pF  
RθJC  
RθJA  
2.2  
25  
OC/W  
Typical thermal resistance  
OC  
OC  
Operating junction temperature range  
Storage temperature range  
TJ  
- 55 to +150  
- 55 to +150  
TSTG  
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle  
Note 2: Measured at 1MHz and applied Reverse Voltage of 4.0V D.C.  
Document Number: DS_D1409013  
Version: H14  

与KBU1007GT0G相关器件

型号 品牌 获取价格 描述 数据表
KBU1008 WTE

获取价格

10A BRIDGE RECTIFIER
KBU1008 GOOD-ARK

获取价格

SINGLE PHASE 10 AMPS. SILICON BRIDGE RECTIFIERS
KBU1008 FUJI

获取价格

10 AMP SILICON BRIDGE RECTIFIER
KBU1008 ASEMI

获取价格

10A Single-Phase Silicon Bridge Rectifier
KBU1008 HY

获取价格

SILICON BRIDGE RECTIFIERS
KBU1008 YANGJIE

获取价格

SINGLE PHASE 10/15/25/35AMPS. SILICON BRIDGE RECTIFIERS
KBU1008 RFE

获取价格

BRIDGE RECTIFIERS 10 Amps
KBU1008 CHENG-YI

获取价格

SILICON BRIDGE RECTIFIERS GLASS PASSIVATED BRIDGE RECTIFIERS
KBU1008 DIOTECH

获取价格

SINGLE PHASE SILICON BRIDGE RECTIFIER
KBU1008 CJ

获取价格

KBU