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KBPC5010W PDF预览

KBPC5010W

更新时间: 2024-02-19 18:34:08
品牌 Logo 应用领域
DAESAN 二极管局域网
页数 文件大小 规格书
2页 231K
描述
CURRENT 50.0 Amperes VOLTAGE 50 to 1000 Volts

KBPC5010W 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:S-PUFM-W4Reach Compliance Code:compliant
风险等级:5.59外壳连接:ISOLATED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:S-PUFM-W4
最大非重复峰值正向电流:450 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-50 °C
最大输出电流:50 A封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:1000 V
表面贴装:NO端子形式:WIRE
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

KBPC5010W 数据手册

 浏览型号KBPC5010W的Datasheet PDF文件第2页 
CURRENT 50.0 Amperes  
VOLTAGE 50 to 1000 Volts  
KBPC50005/W THRU KBPC5010/W  
Features  
K B P C  
K B P C -W  
· Diffused Junction  
H
H
· Low Reverse Leakage Current  
· Low Power Loss, High Efficiency  
· Surge Overload Rating to 400A Peak  
· Electrically Isolated Metal Case for Maximum  
Heat Dissipation  
B
N
E
M
L
A
C
A
P
H
H
· High Case Dielectric Strength of 1500VRMS  
(AC)  
( + )  
(AC)  
( - )  
(+)  
J
A
P
A
C
K
(AC)  
( - )  
(AC)  
Mechanical Data  
G
· Case : High Conductivity Metal  
· Terminals : Plated Leads Solderable per  
MIL-STD-202, Method 208  
· Polarity : Symbols Marked on Case  
· Mounting : Through Hole for #10 Screw  
· Mounting Torque : 8.0 Inch-pounds Maximum  
K B P C  
Max  
/
K B P C -W  
Dim  
Min  
Dim  
J
Min  
17.10  
10.40  
Max  
19.10  
12.40  
A
B
C
E
28.40  
10.97  
15.50  
22.86  
13.30  
28.70  
11.23  
17.60  
25.40  
15.30  
K
L
M
N
P
O
/
O
1.07  
0.97  
/
30.50  
10.97  
17.10  
G
11.23  
19.10  
· Weight : KBPC  
31.6 grams (approx.)  
28.5 grams (approx.)  
Hole for #10 screw  
H
KBPC-W  
O
/
O
5.59  
4.85  
/
All Dimens ions in mm  
· Mounting Position : Any  
· Marking : Type Number  
"W" S uffix Designates Wire Leads  
No S uffix Designates Fast-on Terminals  
Maximum Ratings And Electrical Characteristics  
(Ratings at 25ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive  
load. For capacitive load, derate by 20%)  
KBPC50 KBPC50 KBPC50 KBPC50 KBPC50 KBPC50 KBPC50  
005/W 01/W 02/W 04/W 06/W 08/W 10/W  
Symbols  
Units  
Peak Repetitive Reverse voltage  
Working Peak Reverse voltage  
DC Blocking voltage  
V
V
V
RMM  
RWM  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
Volts  
R
RMS Reverse voltage  
V
R(RMS)  
280  
50  
Volts  
Average Rectified Output Current @ T  
C=55℃  
Io  
Amps  
Non-Repetitive Peak Forward Surge Current,  
8.3ms single half-sine-wave superimposed  
on rated load (JEDEC method)  
I
FSM  
500  
Amps  
Volts  
V
FM  
1.2  
Forward voltage (per element)  
@ IF=25 A  
μA  
@ T  
@ T  
C
=25℃  
10  
Peak Reverse Current at Rated  
DC Blocking voltage  
I
R
mA  
C=125℃  
1.0  
I2t Rating for Fusing (t<8.3ms) (Note 2)  
Typical Junction Capacitance (Note 3)  
I2t  
800  
300  
1.5  
A2  
S
Cj  
pF  
Typical Thermal Resistance Junction to Case  
Operating and Storage Temperature Range  
/W  
RθJA  
T
STG  
j
-50 to +150  
T
Notes:  
(1) Thermal resistance junction to case mounted on heat sink.  
(2) Measured at non-repetitive, for t > 1.0ms and < 8.3ms.  
(3) Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  

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