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KBPC3510 PDF预览

KBPC3510

更新时间: 2024-01-25 23:32:59
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 78K
描述
Bridge Rectifier Diode, 1 Phase, 35A, 1000V V(RRM), Silicon,

KBPC3510 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:S-PUFM-W4针数:4
Reach Compliance Code:compliantHTS代码:8541.10.00.80
风险等级:2.11Is Samacsys:N
其他特性:UL RECOGNIZED外壳连接:ISOLATED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1.1 V
JESD-30 代码:S-PUFM-W4湿度敏感等级:1
最大非重复峰值正向电流:400 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最大输出电流:35 A
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:1000 V
子类别:Bridge Rectifier Diodes表面贴装:NO
端子形式:WIRE端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

KBPC3510 数据手册

 浏览型号KBPC3510的Datasheet PDF文件第2页浏览型号KBPC3510的Datasheet PDF文件第3页浏览型号KBPC3510的Datasheet PDF文件第4页 
KBPC35005/W–KBPC3510/W  
Vishay Lite–On Power Semiconductor  
35A Bridge Rectifier  
Features  
KBPC – W  
Diffused junction  
KBPC  
Low reverse leakage current  
Surge overload rating to 400A peak  
Electrically isolated metal case for maximum  
heat dissipation  
Low power loss, high efficiency  
Case to terminal isolation voltage 2500V  
This series is UL Listed under recognized  
component index, file number E95060  
14 453  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Test  
Type  
Symbol  
Value  
Unit  
Conditions  
Repetitive peak reverse voltage  
=Working peak reverse voltage  
=DC Blocking voltage  
KBPC35005/W  
KBPC3501/W  
KBPC3502/W  
KBPC3504/W  
KBPC3506/W  
KBPC3508/W  
KBPC3510/W  
V
=V  
=V  
50  
100  
200  
400  
600  
800  
1000  
400  
V
V
V
V
V
V
V
A
A
C
RRM  
RWM  
R
Peak forward surge current  
Average forward current  
Junction and storage temperature range  
I
FSM  
T =55 C  
C
I
35  
FAV  
T =T  
j
–65...+150  
stg  
Electrical Characteristics  
T = 25 C  
j
Parameter  
Test Conditions  
Type Symbol Min Typ Max Unit  
Forward voltage  
Reverse current  
I =17.5A  
V
1.2  
10  
1.0  
664 A s  
pF  
V
A
mA  
2
F
F
T =25 C  
I
I
I t  
C
R
T =125 C  
C
R
2
2
I t Rating for fusing  
Diode capacitance  
Thermal resistance junction to case  
V =4V, f=1MHz  
R
C
D
300  
2.7  
R
thJC  
K/W  
Rev. A2, 24-Jun-98  
1 (4)  

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