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KBPC3501W PDF预览

KBPC3501W

更新时间: 2024-02-18 07:54:53
品牌 Logo 应用领域
EIC 整流二极管桥式整流二极管局域网
页数 文件大小 规格书
2页 36K
描述
SILICON BRIDGE RECTIFIERS

KBPC3501W 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:S-PUFM-W4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.29
Is Samacsys:N其他特性:UL RECOGNIZED
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:S-PUFM-W4
湿度敏感等级:1最大非重复峰值正向电流:400 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最大输出电流:35 A封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子形式:WIRE
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

KBPC3501W 数据手册

 浏览型号KBPC3501W的Datasheet PDF文件第2页 
KBPC3500W - KBPC3510W  
SILICON BRIDGE RECTIFIERS  
BR50W  
PRV : 50 - 1000 Volts  
Io : 35 Amperes  
0.732 (18.6)  
0.692 (17.5)  
FEATURES :  
1.130 (28.7)  
* High current capability  
* High surge current capability  
* High reliability  
0.470 (11.9)  
1.120 (28.4)  
0.430 (10.9)  
* Low reverse current  
* Low forward voltage drop  
* Pb / RoHS Free  
0.21 (5.3)  
0.20 (5.1)  
0.042 (1.06)  
0.038 (0.96)  
MECHANICAL DATA :  
* Case : Metal Case  
1.2 (30.5)  
MIN.  
* Epoxy : UL94V-O rate flame retardant  
* Terminals : plated .25" (6.35 mm). Faston  
* Polarity : Polarity symbols marked on case  
* Mounting position : Bolt down on heat-sink with  
silicone thermal compound between bridge  
and mounting surface for maximum heat  
transfer efficiency.  
0.310 (7.87)  
0.280(7.11)  
Dimensions in inches and ( millimeters )  
* Weight : 17.1 grams(approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
KBPC  
KBPC  
KBPC  
KBPC  
KBPC  
KBPC  
KBPC  
SYMBOL  
RATING  
UNIT  
3500W 3501W 3502W 3504W 3506W 3508W 3510W  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
35  
600  
420  
600  
800  
560  
800  
1000  
700  
VRRM  
VRMS  
VDC  
V
V
V
A
Maximum DC Blocking Voltage  
100  
1000  
IF(AV)  
Maximum Average Forward Current Tc = 55°C  
Peak Forward Surge Current Single half sine wave  
Superimposed on rated load (JEDEC Method)  
Current Squared Time at t < 8.3 ms.  
400  
IFSM  
A
I2t  
VF  
A2S  
V
660  
Maximum Forward Voltage per Diode at IF = 17.5 A  
1.1  
10  
200  
IR  
mA  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Typical Thermal Resistance (Note 1)  
Ta = 25 °C  
IR(H)  
mA  
Ta = 100 °C  
1.5  
°C/W  
°C  
RqJC  
RqJA  
TJ  
Typical Thermal Resistance at Junction to Ambient  
Operating Junction Temperature Range  
Storage Temperature Range  
10  
- 40 to + 150  
- 40 to + 150  
°C  
TSTG  
°C  
Note :  
1. Thermal Resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" (19cm.x 9cm.x 11.8cm.) Al.-Finned Plate  
Page 1 of 2  
Rev. 01 : July 24, 2005  

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