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KBPC1004WP PDF预览

KBPC1004WP

更新时间: 2024-01-09 01:17:31
品牌 Logo 应用领域
德欧泰克 - DIOTEC /
页数 文件大小 规格书
2页 830K
描述
Bridge Rectifier Diode, 1 Phase, 10A, 1600V V(RRM), Silicon, 28.60 X 28.60 MM, 7.30 MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-2

KBPC1004WP 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:S-PUFM-W4针数:2
Reach Compliance Code:compliantHTS代码:8541.10.00.80
风险等级:5.26Is Samacsys:N
其他特性:UL RECOGNIZED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.2 VJESD-30 代码:S-PUFM-W4
湿度敏感等级:1最大非重复峰值正向电流:300 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:1600 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子形式:WIRE
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

KBPC1004WP 数据手册

 浏览型号KBPC1004WP的Datasheet PDF文件第1页 
KBPC10 00...16 FP/WP KBPC15 00...16 FP/WP KBPC25 00...16 FP/WP  
Maximum ratings  
Grenzwerte  
Repetitive peak forward current  
Periodischer Spitzenstrom  
f > 15 Hz  
TA = 25°C  
TA = 25°C  
IFRM  
IFSM  
i2t  
60 A 1)  
270/300 A  
375 A2s  
Peak forward surge current 50/60 Hz half sine-wave  
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle  
Rating for fusing, t < 10 ms  
Grenzlastintegral, t < 10 ms  
Operating junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-50...+150°C  
-50...+150°C  
Characteristics  
Kennwerte  
Max. current with cooling fin 300 cm²  
Dauergrenzstrom mit Kühlblech 300 cm2  
TA = 50°C R-load  
IFAV  
IFAV  
25 A  
20 A  
C-load  
Forward voltage – Durchlass-Spannung  
Leakage current – Sperrstrom  
Tj = 25°C IF = 12.5 A VF  
< 1.2 V 2)  
Tj = 25°C VR = VRRM  
IR  
< 25 µA  
Isolation voltage terminals to case  
VISO  
> 2500 V  
Isolationsspannung Anschlüsse zum Gehäuse  
Thermal resistance junction to case  
RthC  
< 2.0 K/W  
Wärmewiderstand Sperrschicht – Gehäuse  
Admissible torque for mounting  
Zulässiges Anzugsdrehmoment  
10-32 UNF  
M5  
18 ± 10% lb.in.  
2 ± 10% Nm  
102  
120  
[%]  
[A]  
10  
100  
Tj = 125°C  
80  
Tj = 25°C  
1
60  
40  
10-1  
IF  
20  
IFAV  
0
270a-(12a-1.2v)  
10-2  
0.4  
1.0  
1.4  
VF 0.8  
1.2  
[V] 1.8  
0
TA  
100  
150  
50  
[°C]  
Rated forward current versus ambient temperature1)  
Zul. Richtstrom in Abh. von der Umgebungstemp.1)  
Forward characteristics (typical values)  
Durchlasskennlinien (typische Werte)  
1
2
Valid, if the temperature of the case is kept to TC = 120°C – Gültig, wenn die Gehäusetemperatur auf TC = 120°C gehalten wird  
Valid per diode – Gültig pro Diode  
2
http://www.diotec.com/  
© Diotec Semiconductor AG  

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