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KBP306G PDF预览

KBP306G

更新时间: 2024-01-29 09:09:42
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页数 文件大小 规格书
2页 730K
描述
Voltage 50V ~ 1000V 3.0Amp Glass Passivited Bridge Rectifiers

KBP306G 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:R-PSIP-W4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.67Is Samacsys:N
其他特性:UL RECOGNIZED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PSIP-W4JESD-609代码:e3
最大非重复峰值正向电流:80 A元件数量:4
相数:1端子数量:4
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V表面贴装:NO
端子面层:MATTE TIN端子形式:WIRE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

KBP306G 数据手册

 浏览型号KBP306G的Datasheet PDF文件第2页 
KBP3005G ~ KBP310G  
Voltage 50V ~ 1000V  
3.0Amp Glass Passivited Bridge Rectifiers  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
KBP  
FEATURES  
Surge overload rating -60amperes peak  
Ideal for printed circuit board  
Plastic material has Underwriters Laboratory  
flammability classification 94V-0  
Mounting position: Any  
G
A
B E  
D K  
K J  
F
L
C
H
Millimeter  
Millimeter  
Min. Max.  
3.0 x 45°  
REF.  
REF.  
Min.  
Max.  
15.24  
11.68  
5.08  
-
A
B
C
D
14.22  
10.67  
4.57  
G
H
J
1.15  
1.35  
12.7  
-
-
16.25  
K
1.52  
E
F
11.68  
0.76  
12.70  
0.86  
L
3.60  
4.10  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.  
For capacitive load, de-rate current by 20%.)  
Part Number  
Parameter  
Symbol  
Unit  
KBP  
KBP  
KBP  
KBP  
KBP  
KBP  
KBP  
3005G  
301G  
302G  
304G  
306G  
308G  
310G  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Bridge Input Voltage  
DC Blocking Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
V
V
V
700  
100  
1000  
Maximum Average Forward Rectified Current  
@TA=50°C  
I(AV)  
IFSM  
VF  
3.0  
60  
A
A
Peak Forward Surge Current 8.3 ms Single  
Half Sine-Wave Super Imposed on Rated  
Load (JEDEC Method)  
Maximum Forward Voltage Drop  
Per Bridge Element at 3.0A Peak  
Maximum Reverse Current at Rated  
DC Blocking Voltage per Element @TA=25  
Maximum Reverse Current at Rated  
DC Blocking Voltage per Element @TA=100℃  
1.1  
10  
1
V
µA  
mA  
IR  
Typical Thermal Resistance 1  
Typical Thermal Resistance 2  
Power dissipation  
R
θJA  
θJC  
40  
10  
°C/W  
°C/W  
W
R
P
D
3
Operating and Storage temperature range  
TJ, TSTG  
-55~150  
°C  
Notes  
1. Thermal Resistance Junction to Ambient.  
2. Thermal Resistance Junction to case.  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
13-May-2011 Rev. A  
Page 1 of 2  

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