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KBP204 PDF预览

KBP204

更新时间: 2024-02-01 21:39:51
品牌 Logo 应用领域
DAESAN /
页数 文件大小 规格书
2页 176K
描述
CURRENT 2.0 Amperes VOLTAGE 50 to 1000 Volts

KBP204 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSIP-T4
针数:4Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.61
其他特性:UL RECOGNIZED最小击穿电压:400 V
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PSIP-T4最大非重复峰值正向电流:220 A
元件数量:4相数:1
端子数量:4最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):255
认证状态:Not Qualified最大重复峰值反向电压:400 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

KBP204 数据手册

 浏览型号KBP204的Datasheet PDF文件第2页 
CURRENT 2.0 Amperes  
VOLTAGE 50 to 1000 Volts  
KBP201 THRU KBP207  
Features  
· Glass Passivated Die Construction  
· High Case Dielectric Strength of 1500VRMS  
· Low Reverse Leakage Current  
A
· Surge Overload Rating to 65A Peak  
· Ideal for Printed Circuit Board Applications  
· Plastic Material - UL Flammability Classification 94V-0  
B
-
+
H
C
K B P  
Mechanical Data  
Dim  
A
Min  
14.00  
10.50  
15.00  
4.70  
Max  
G
15.00  
11.50  
D
· Case : Molded Plastic  
B
· Terminals : Plated Leads, Solderable per  
MIL-STD-202, Method 208  
· Polarity : As Marked on Body  
· Approx. Weight : 1.52 grams  
· Mounting Position : Any  
C
E
D
5.00  
4.00  
2.50  
E
3.50  
G
2.30  
H
0.70 Typical  
· Marking : Type Number  
All Dimens ions in mm  
Maximum Ratings And Electrical Characteristics  
(Ratings at 25ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive  
load. For capacitive load, derate by 20%)  
KBP  
201  
KBP  
202  
KBP  
203  
KBP  
204  
KBP  
205  
KBP  
206  
KBP  
Symbols  
Units  
207  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
RMM  
RWM  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
Volts  
R
RMS Reverse Voltage  
V
R(RMS)  
280  
2.0  
Volts  
Average Rectified Output Current @ T  
C
=105  
Io  
Amps  
Non-Repetitive Peak Forward Surge Current,  
8.3ms single half-sine-wave superimposed  
on rated load per element (JEDEC method)  
IFSM  
65  
Amps  
VFM  
1.1  
Volts  
Forward Voltage (per element)  
@ IF=2.0 A  
@ T  
C
=25℃  
5.0  
Peak Reverse Current at Rated  
DC Blocking Voltage  
IRM  
μA  
@ TC  
=125℃  
500  
Typical Junction Capacitance  
per Element (Note 2)  
Cj  
25  
pF  
Typical Thermal Resistance (Note 1)  
38  
/W  
RθJC  
T
STG  
j
Operating and Storage Temperature Range  
-65 to +150  
T
Notes:  
(1) Thermal resistance from junction to case per element. Unit mounted on 75 x 75 x 16mm aluminum plate heat sink.  
(2) Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.  

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