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KBJ25B PDF预览

KBJ25B

更新时间: 2024-02-11 05:21:55
品牌 Logo 应用领域
DAESAN /
页数 文件大小 规格书
2页 233K
描述
CURRENT 25.0 Amperes VOLTAGE 50 to 1000 Volts

KBJ25B 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PSFM-T4Reach Compliance Code:unknown
风险等级:5.24其他特性:HIGH RELIABILITY, UL RECOGNIZED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSFM-T4
最大非重复峰值正向电流:300 A元件数量:4
相数:1端子数量:4
最大输出电流:25 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:1200 V表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

KBJ25B 数据手册

 浏览型号KBJ25B的Datasheet PDF文件第2页 
CURRENT 25.0 Amperes  
VOLTAGE 50 to 1000 Volts  
KBJ25A THRU KBJ25M  
Features  
L
M
· Glass Passivated Die Construction  
· High Case Dielectric Strength of 1500VRMS  
· Low Reverse Leakage Current  
· Surge Overload Rating to 350A Peak  
· Ideal for Printed Circuit Board Applications  
· Plastic Material - UL Flammability Classification 94V-0  
A
K
B
S
N
_
J
P
D
H
C
R
I
G
E
E
K B J  
Mechanical Data  
Dim  
A
Min  
29.70  
19.70  
17.00  
3.80  
Max  
Dim  
J
Min  
Max  
30.30  
20.30  
18.00  
4.20  
2.30  
2.70  
· Case : Molded Plastic  
· Terminals : Plated Leads, Solderable per  
MIL-STD-202, Method 208  
O
B
3.0 X 45  
K
L
C
4.40  
3.40  
3.10  
2.50  
0.60  
10.80  
4.80  
3.80  
3.40  
2.90  
0.80  
11.20  
M
N
P
R
S
D
E
· Polarity : Molded on Body  
7.30  
7.70  
· Mounting : Through Hole for #6 Screw  
· Mounting Torque : 5.0 in-Ibs Maximum  
· Weight : 6.6 grams (approx.)  
· Marking : Type Number  
G
H
I
9.80  
10.20  
2.40  
2.00  
0.90  
1.10  
All Dimens ions in mm  
Maximum Ratings And Electrical Characteristics  
(Ratings at 25ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive  
load. For capacitive load, derate by 20%)  
KBJ  
25A  
KBJ  
25B  
KBJ  
25D  
KBJ  
25G  
KBJ  
25J  
KBJ  
25K  
KBJ  
25M  
Symbols  
Units  
Peak Repetitive Reverse voltage  
Working Peak Reverse voltage  
DC Blocking voltage  
V
V
V
RMM  
RWM  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
Volts  
R
RMS Reverse voltage  
V
R(RMS)  
280  
25  
Volts  
Average Rectified Output Current @ T  
C
=100  
Io  
Amps  
Non-Repetitive Peak Forward Surge Current,  
8.3ms single half-sine-wave superimposed  
on rated load (JEDEC method)  
IFSM  
350  
Amps  
VFM  
1.05  
Volts  
Forward voltage per element  
@ IF=7.5 A  
@ T  
C
C
=25℃  
10  
Peak Reverse Current at Rated  
DC Blocking voltage  
I
R
μA  
@ T  
=125℃  
500  
510  
I2t Rating for Fusing (t<8.3ms) (Note 1)  
I2t  
A2  
S
Typical Junction Capacitance  
per element (Note 2)  
C
j
85  
pF  
Typical Thermal Resistance,  
Junction to Case (Note 3)  
1.6  
/W  
RθJA  
T
STG  
j
Operating and Storage Temperature Range  
-65 to +150  
T
Notes:  
(1) Non-repetitive, for t > 1.0ms and < 8.3ms.  
(2) Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.  
(3) Thermal Resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm copper plate heat sink.  

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