生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | 11 X 9 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63 | 针数: | 63 |
Reach Compliance Code: | unknown | ECCN代码: | 3A991.B.1.A |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.83 |
最长访问时间: | 45 ns | JESD-30 代码: | R-PBGA-B63 |
长度: | 11 mm | 内存密度: | 268435456 bit |
内存集成电路类型: | FLASH | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 63 |
字数: | 33554432 words | 字数代码: | 32000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 32MX8 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | VFBGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY |
并行/串行: | PARALLEL | 编程电压: | 2.7 V |
认证状态: | Not Qualified | 座面最大高度: | 1 mm |
最大供电电压 (Vsup): | 2.9 V | 最小供电电压 (Vsup): | 2.5 V |
标称供电电压 (Vsup): | 2.7 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 类型: | NAND TYPE |
宽度: | 9 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K9F5608B0D-JCB0T | SAMSUNG |
获取价格 |
Flash, 32MX8, 30ns, PBGA63 | |
K9F5608B0D-JIB00 | SAMSUNG |
获取价格 |
Flash, 32MX8, 30ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63 | |
K9F5608B0D-PCB0 | SAMSUNG |
获取价格 |
Flash, 32MX8, 30ns, PDSO48 | |
K9F5608B0D-PCB00 | SAMSUNG |
获取价格 |
Flash, 32MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48 | |
K9F5608B0DPIB000 | SAMSUNG |
获取价格 |
Flash, 32MX8, 45ns, PDSO48, 20 X 12 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48 | |
K9F5608B0D-PIB0T | SAMSUNG |
获取价格 |
Flash, 32MX8, 30ns, PDSO48 | |
K9F5608D0C | SAMSUNG |
获取价格 |
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory | |
K9F5608D0C-D | SAMSUNG |
获取价格 |
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory | |
K9F5608D0C-DCB0 | SAMSUNG |
获取价格 |
Flash, 32MX8, 30ns, PBGA63, | |
K9F5608D0C-DCB00 | SAMSUNG |
获取价格 |
Flash, 32MX8, 30ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, TBGA-63 |