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K9F5608D0C-HCB0 PDF预览

K9F5608D0C-HCB0

更新时间: 2023-02-26 12:42:00
品牌 Logo 应用领域
三星 - SAMSUNG 内存集成电路
页数 文件大小 规格书
42页 681K
描述
Flash, 32MX8, 30ns, PBGA63,

K9F5608D0C-HCB0 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:FBGA, BGA63,10X12,32Reach Compliance Code:compliant
风险等级:5.84最长访问时间:30 ns
命令用户界面:YES数据轮询:NO
JESD-30 代码:R-PBGA-B63内存密度:268435456 bit
内存集成电路类型:FLASH内存宽度:8
部门数/规模:2K端子数量:63
字数:33554432 words字数代码:32000000
最高工作温度:125 °C最低工作温度:-10 °C
组织:32MX8封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA63,10X12,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, FINE PITCH
页面大小:512 words并行/串行:PARALLEL
电源:2.65 V认证状态:Not Qualified
就绪/忙碌:YES部门规模:16K
最大待机电流:0.00005 A子类别:Flash Memories
最大压摆率:0.02 mA标称供电电压 (Vsup):2.65 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
切换位:NO

K9F5608D0C-HCB0 数据手册

 浏览型号K9F5608D0C-HCB0的Datasheet PDF文件第2页浏览型号K9F5608D0C-HCB0的Datasheet PDF文件第3页浏览型号K9F5608D0C-HCB0的Datasheet PDF文件第4页浏览型号K9F5608D0C-HCB0的Datasheet PDF文件第5页浏览型号K9F5608D0C-HCB0的Datasheet PDF文件第6页浏览型号K9F5608D0C-HCB0的Datasheet PDF文件第7页 
K9F5608Q0C  
K9F5608D0C  
K9F5608U0C  
K9F5616Q0C  
K9F5616D0C  
K9F5616U0C  
FLASH MEMORY  
Document Title  
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
Initial issue.  
Apr. 25th 2002  
Advance  
1.0  
1.Pin assignment of TBGA dummy ball is changed.  
(before) DNU --> (after) N.C  
Dec.14th 2002  
Preliminary  
2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36)  
3. Add the data protection Vcc guidence for 1.8V device - below about  
1.1V. (Page 37)  
4. Add the specification of Block Lock scheme.(Page 32~35)  
5. Pin assignment of TBGA A3 ball is changed.  
(before) N.C --> (after) Vss  
6. Pin assignment of WSOP #38 pin is changed.  
(before) LOCKPRE --> (after) N.C  
2.0  
1. The Maximum operating current is changed.  
Program : Icc2 20mA-->25mA  
Erase : Icc3 20mA-->25mA  
Jan. 17th 2003  
Preliminary  
Preliminary  
2.1  
2.2  
The min. Vcc value 1.8V devices is changed.  
K9F56XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V  
Mar. 5th 2003  
Mar. 13rd 2003  
Pb-free Package is added.  
K9F5608U0C-FCB0,FIB0  
K9F5608Q0C-HCB0,HIB0  
K9F5616U0C-HCB0,HIB0  
K9F5616U0C-PCB0,PIB0  
K9F5616Q0C-HCB0,HIB0  
K9F5608U0C-HCB0,HIB0  
K9F5608U0C-PCB0,PIB0  
2.3  
Errata is added.(Front Page)-K9F56XXQ0C  
tWC tWH tWP tRC tREH tRP tREA tCEA  
Mar. 26th 2003  
Specification  
45 15 25 50 15 25 30  
45  
Relaxed value 60 20 40 60 20 40 40  
55  
New definition of the number of invalid blocks is added.  
2.4  
2.5  
Apr. 4th 2003  
(Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb  
memory space.)  
Jun. 30th 2003  
1. The guidence of LOCKPRE pin usage is changed.  
Don’t leave it N.C. Not using LOCK MECHANISM & POWER-ON AUTO-  
READ, connect it Vss.(Before)  
--> Not using LOCK MECHANISM & POWER-ON AUTO-READ, connect  
it Vss or leave it N.C(After)  
2. 2.65V device is added.  
3.Note is added.  
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for  
durations of 20 ns or less.)  
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.  
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm  
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right  
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have  
any questions, please contact the SAMSUNG branch office near you.  
1

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