生命周期: | Active | 零件包装代码: | BGA |
包装说明: | VFBGA, | 针数: | 44 |
Reach Compliance Code: | compliant | ECCN代码: | 3A991.B.1.A |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.19 |
最长访问时间: | 100 ns | 其他特性: | TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE |
启动块: | TOP | JESD-30 代码: | R-PBGA-B44 |
内存密度: | 268435456 bit | 内存集成电路类型: | FLASH |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 44 | 字数: | 16777216 words |
字数代码: | 16000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 16MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | VFBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 并行/串行: | PARALLEL |
编程电压: | 1.8 V | 认证状态: | Not Qualified |
座面最大高度: | 1 mm | 最大供电电压 (Vsup): | 1.95 V |
最小供电电压 (Vsup): | 1.7 V | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子形式: | BALL |
端子节距: | 0.5 mm | 端子位置: | BOTTOM |
类型: | NOR TYPE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K8S5415ETC-FC1E0 | SAMSUNG |
获取价格 |
Flash, 16MX16, 100ns, PBGA44, 7.70 X 6.20 MM, 1 MM HEIGHT, 0.50 MM PITCH, FBGA-44 | |
K8S5415ETC-FE1C0 | SAMSUNG |
获取价格 |
Flash, 16MX16, 100ns, PBGA44, 7.70 X 6.20 MM, 1 MM HEIGHT, 0.50 MM PITCH, FBGA-44 | |
K8S5415ETC-FE1D0 | SAMSUNG |
获取价格 |
Flash, 16MX16, 100ns, PBGA44, 7.70 X 6.20 MM, 1 MM HEIGHT, 0.50 MM PITCH, FBGA-44 | |
K8S5415ETC-FE1E0 | SAMSUNG |
获取价格 |
Flash, 16MX16, 100ns, PBGA44, 7.70 X 6.20 MM, 1 MM HEIGHT, 0.50 MM PITCH, FBGA-44 | |
K8S5415ETC-FE1F0 | SAMSUNG |
获取价格 |
Flash, 16MX16, 100ns, PBGA44, 7.70 X 6.20 MM, 1 MM HEIGHT, 0.50 MM PITCH, FBGA-44 | |
K8S5415ETC-SC1C0 | SAMSUNG |
获取价格 |
Flash, 16MX16, 100ns, PBGA44, 7.70 X 6.20 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA- | |
K8S5415ETC-SE1C0 | SAMSUNG |
获取价格 |
Flash, 16MX16, 100ns, PBGA44, 7.70 X 6.20 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA- | |
K8S5415ETC-SE1E0 | SAMSUNG |
获取价格 |
Flash, 16MX16, 100ns, PBGA44, 7.70 X 6.20 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA- | |
K8S5415EZB-DC1DT | SAMSUNG |
获取价格 |
Flash Memory | |
K8S5415EZB-FC1C0 | SAMSUNG |
获取价格 |
Flash Memory |