5秒后页面跳转
K7B401825M-QC75 PDF预览

K7B401825M-QC75

更新时间: 2024-09-30 20:53:47
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器
页数 文件大小 规格书
16页 437K
描述
Standard SRAM, 256KX18, 7.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

K7B401825M-QC75 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:LQFP, QFP100,.63X.87Reach Compliance Code:unknown
风险等级:5.92Base Number Matches:1

K7B401825M-QC75 数据手册

 浏览型号K7B401825M-QC75的Datasheet PDF文件第2页浏览型号K7B401825M-QC75的Datasheet PDF文件第3页浏览型号K7B401825M-QC75的Datasheet PDF文件第4页浏览型号K7B401825M-QC75的Datasheet PDF文件第5页浏览型号K7B401825M-QC75的Datasheet PDF文件第6页浏览型号K7B401825M-QC75的Datasheet PDF文件第7页 
K7B401825M  
256Kx18 Synchronous SRAM  
Document Title  
256Kx18-Bit Synchronous Burst SRAM  
Revision History  
Remark  
Rev. No.  
History  
Draft Date  
Preliminary  
Preliminary  
0.0  
0.1  
Initial draft  
May. 15. 1997  
Modify power down cycle timing & Interleaved read timing,  
Insert Note 4 at AC timing characteristics.  
Change ISB1 value from 10mA to 30mA.  
February. 11. 1998  
Change ISB2 value from 10mA to 20mA.  
Preliminary  
Preliminary  
0.2  
0.3  
Change Undershoot spec  
April. 14. 1998  
May 13. 1998  
from -3.0V(pulse width£20ns) to -2.0V(pulse width£tCYC/2)  
Add Overshoot spec 4.6V((pulse width£tCYC/2)  
Change VIH max from 5.5V to VDD+0.5V  
Change ISB2 value from 20mA to 30mA.  
Change VDD condition from VDD=3.3V+10%/-5% to VDD=3.3V+0.3V/-0.165V.  
Final  
Final  
1.0  
2.0  
Final spec Release  
May 15. 1998  
Dec. 02. 1998  
Add VDDQ Supply voltage( 2.5V )  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
- 1 -  
December 1998  
Rev. 2.0  

与K7B401825M-QC75相关器件

型号 品牌 获取价格 描述 数据表
K7B401825M-QC80 SAMSUNG

获取价格

Standard SRAM, 256KX18, 8ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7B401825M-QC90 SAMSUNG

获取价格

Standard SRAM, 256KX18, 9ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7B401825M-TC80 SAMSUNG

获取价格

Cache SRAM, 256KX18, 8ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7B401825M-TC90 SAMSUNG

获取价格

Cache SRAM, 256KX18, 9ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7B403225B SAMSUNG

获取价格

128Kx36/x32 & 256Kx18 Synchronous SRAM
K7B403225B-QC SAMSUNG

获取价格

128Kx36/x32 & 256Kx18 Synchronous SRAM
K7B403225B-QC65 SAMSUNG

获取价格

Cache SRAM, 128KX32, 6.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7B403225B-QC650 SAMSUNG

获取价格

Cache SRAM, 128KX32, 6.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7B403225B-QC75 SAMSUNG

获取价格

Cache SRAM, 128KX32, 7.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7B403225B-QC750 SAMSUNG

获取价格

Cache SRAM, 128KX32, 7.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100