Datasheet > K7A401809A-QC300

K7A401809A-QC300

更新时间： 2023-03-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
17页	465K
描述
Cache SRAM, 256KX18, 2.2ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

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K7A401809A-QC300 数据手册

K7A403609A

K7A401809A

128Kx36 & 256Kx18 Synchronous SRAM

Document Title

128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM

Revision History

Remark

Rev. No

History

Draft Date

Preliminary

0.0

0.1

0.2

Initial draft

Jan. 22. 2000

Feb. 10. 2000

April. 03. 2000

Add tCYC 300MHz.

1. Changed DC condition at Icc and ISB.

Icc ; from 540mA to 590mA at -30,

from 490mA to 540mA at -27,

from 440mA to 490mA at -25,

from 410mA to 460mA at -22,

from 390mA to 440mA at -20,

from 370mA to 420mA at -18,

ISB ; from 190mA to 200mA at -30,

from 180mA to 190mA at -27,

from 170mA to 180mA at -25,

from 160mA to 170mA at -22,

from 150mA to 160mA at -20,

from 140mA to 150mA at -18,

Final

May. 15. 2000

1.0

1. Final spec release

2. Changed input & output capacitance.

CIN

; from 6pF to 5pF,

COUT ; from 8pF to 7pF,

3.Changed part number

from K7A4036(18)00A -under 167MHz to K7A4036(18)09A -over183MHz

Final

August. 17. 2000

August. 30. 2000

2.0

3.0

1. Changed Input setup at -275MHz and 300MHz

From 0.8ns to 0.75ns,

1. Changed Input setup at -300MHz

From 0.75ns to 0.6ns

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

- 1 -

August 2000

Rev 3.0

12 3 4 5 6 7...17

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