Datasheet > K6T1008V2C

K6T1008V2C

更新时间： 2024-02-04 02:55:02

品牌	Logo	应用领域
三星 - SAMSUNG		/
页数	文件大小	规格书
11页	146K
描述
128K x8 bit Low Power and Low Voltage CMOS Static RAM

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数据手册

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K6T1008V2C 数据手册

K6T1008V2C, K6T1008U2C Family

CMOS SRAM

Document Title

128K x8 bit Low Power and Low Voltage CMOS Static RAM

Revision History

Revision No. History

Draft Data

Remark

0.0

1.0

Initial draft

July 3, 1996

Preliminary

Finalize

December 16, 1996

Final

- Increased ISB, IDR

Commercial part = 10mA

Industrial part = 20mA

2.0

Revise

November 25, 1997

Final

- Change speed bin

KM68V1000C Family: 70/85ns ® 70/100ns

KM68U1000C Family: 70/100ns ® 85/100ns

- Improved operating current: 40mA ® 35mA

- Improved power dissipation

PD: 0.7W ® 1.0W

- Improved standby current

Extended/Industrial: 20 ® 10mA

- VIL: 0.4V ® 0.6V

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

Revision 2.0

November 1997

12 3 4 5 6 7...11

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与K6T1008V2C相关器件

型号	品牌	获取价格	描述	数据表
K6T1008V2C-B	SAMSUNG	获取价格	128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-D	SAMSUNG	获取价格	128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-F	SAMSUNG	获取价格	128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-GB10	SAMSUNG	获取价格	128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-GB70	SAMSUNG	获取价格	128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-GD10	SAMSUNG	获取价格	128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-GD70	SAMSUNG	获取价格	128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-GF10	SAMSUNG	获取价格	128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C-GF100	SAMSUNG	获取价格	Standard SRAM, 128KX8, 100ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32
K6T1008V2C-GF70	SAMSUNG	获取价格	128K x8 bit Low Power and Low Voltage CMOS Static RAM