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K6R4016V1D-UI100 PDF预览

K6R4016V1D-UI100

更新时间: 2024-02-10 13:13:09
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
12页 224K
描述
Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44

K6R4016V1D-UI100 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2, TSOP44,.46,32针数:44
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.82
最长访问时间:10 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G44长度:18.41 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:16湿度敏感等级:2
功能数量:1端子数量:44
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP44,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3.3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.005 A
最小待机电流:3 V子类别:SRAMs
最大压摆率:0.075 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:10.16 mm
Base Number Matches:1

K6R4016V1D-UI100 数据手册

 浏览型号K6R4016V1D-UI100的Datasheet PDF文件第2页浏览型号K6R4016V1D-UI100的Datasheet PDF文件第3页浏览型号K6R4016V1D-UI100的Datasheet PDF文件第4页浏览型号K6R4016V1D-UI100的Datasheet PDF文件第5页浏览型号K6R4016V1D-UI100的Datasheet PDF文件第6页浏览型号K6R4016V1D-UI100的Datasheet PDF文件第7页 
PRELIMPreliminaryPPPPPPPPPINARY  
CMOS SRAM  
K6R4016V1D  
Document Title  
256Kx16 Bit High Speed Static RAM(3.3V Operating).  
Operated at Commercial and Industrial Temperature Ranges.  
Revision History  
RevNo.  
Rev. 0.0  
Rev. 0.1  
Rev. 0.2  
Rev. 0.3  
History  
Draft Data  
Remark  
Initial release with Preliminary.  
Add Low Ver.  
Aug. 20. 2001  
Sep. 19. 2001  
Sep. 28. 2001  
Oct. 09. 2001  
Preliminary  
Preliminary  
Preliminary  
Preliminary  
Package dimensions modify on page 11.  
Change ICC , ISB, ISB1  
Item  
Previous  
Current  
80mA  
65mA  
55mA  
45mA  
100mA  
85mA  
75mA  
65mA  
20mA  
1.2mA  
8ns  
110mA  
90mA  
80mA  
70mA  
130mA  
115mA  
100mA  
85mA  
30mA  
0.5mA  
10ns  
12ns  
15ns  
8ns  
10ns  
12ns  
15ns  
ICC(Commercial)  
ICC(Industrial)  
ISB  
ISB1(L-ver.)  
Rev. 0.4  
Rev. 1.0  
1. Correct AC parameters : Read & Write Cycle  
2. Change Data Retention Current :  
from 0.45mA to 1.1mA when Vcc=3.0V  
from 0.35mA to 0.9mA when Vcc=2.0V  
3. Limit L-Ver. to 48 TBGA Package  
Nov.23. 2001  
Dec.18. 2001  
Preliminary  
1. Delete 12ns,15ns speed bin.  
2. Change Icc for Industrial mode.  
Final  
Item  
Previous  
100mA  
85mA  
Current  
90mA  
75mA  
8ns  
10ns  
ICC(Industrial)  
Rev. 2.0  
Rev. 2.1  
Rev. 2.2  
Rev. 2.3  
Rev. 3.0  
Rev. 4.0  
1. Add tBA,tBLZ,tBHZ,tBW AC parematers.  
1. Correct the Package dimensions(48-TBGA)  
1. Add the tPU and tPD into the waveform.  
1. Change the current parameters (Isb1 L-ver, Idr)  
1. Add the Lead Free Package type.  
Feb. 14. 2002  
Oct. 23. 2002  
Mar. 10, 2003  
Final  
Final  
Final  
June. 12, 2003 Final  
June. 20, 2003 Final  
1. Change the Idr parameters  
Mar. 15, 2004  
Final  
previous  
1.2mA  
1.8mA  
Current  
1.4mA  
2.0mA  
Idr(2V)  
Idr(3V)  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev 4.0  
Mar. 2004  
- 1 -  

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