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K6R4016C1D-KI10 PDF预览

K6R4016C1D-KI10

更新时间: 2024-09-30 22:32:19
品牌 Logo 应用领域
三星 - SAMSUNG 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
12页 142K
描述
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

K6R4016C1D-KI10 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SOJ, SOJ44,.44
Reach Compliance Code:unknown风险等级:5.84
最长访问时间:10 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-J44JESD-609代码:e1
长度:25.58 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
湿度敏感等级:3功能数量:1
端子数量:44字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装等效代码:SOJ44,.44封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:5 V
认证状态:Not Qualified座面最大高度:3.76 mm
最大待机电流:0.005 A最小待机电流:4.5 V
子类别:SRAMs最大压摆率:0.075 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN SILVER COPPER端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:10.16 mm
Base Number Matches:1

K6R4016C1D-KI10 数据手册

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PRELIMPreliminaryPPPPPPPPPINARY  
CMOS SRAM  
K6R4016C1D  
Document Title  
256Kx16 Bit High Speed Static RAM(5.0V Operating).  
Operated at Commercial and Industrial Temperature Ranges.  
Revision History  
Rev No.  
Rev. 0.0  
Rev. 0.1  
Rev. 0.2  
History  
Draft Data  
Remark  
Initial release with Preliminary.  
Package dimension modify on page 11.  
Change Icc, Isb and Isb1  
September. 7. 2001  
Septermber.28. 2001  
November, 3, 2001  
Preliminary  
Preliminary  
Preliminary  
Item  
10ns  
Previous  
90mA  
Current  
65mA  
55mA  
45mA  
85mA  
75mA  
65mA  
20mA  
5mA  
ICC(Commercial)  
12ns  
15ns  
10ns  
12ns  
15ns  
80mA  
70mA  
115mA  
100mA  
85mA  
ICC(Industrial)  
ISB  
ISB1(Normal)  
30mA  
10mA  
Rev. 0.3  
Rev. 0.4  
1. Correct AC parameters : Read & Write Cycle  
2. Corrrect Power part : Delete "P-Industrial,Low Power" part  
3. Delete Data Retention Characteristics  
November, 23, 2001  
December, 18, 2001  
Preliminary  
Preliminary  
1. Delete 15ns speed bin.  
2. Change Icc for Industrial mode.  
Item  
Previous  
85mA  
75mA  
Current  
75mA  
10ns  
12ns  
ICC(Industrial)  
65mA  
Rev. 1.0  
Rev. 2.0  
1. Final datasheet release.  
2. Delete 12ns speed bin.  
July, 09, 2002  
June. 20, 2003  
Final  
Final  
1. Add the Lead Free Package type.  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev 2.0  
June 2003  
- 1 -  

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