是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | TSSOP, TSSOP86,.46,20 |
Reach Compliance Code: | unknown | 风险等级: | 5.92 |
最长访问时间: | 5.5 ns | 最大时钟频率 (fCLK): | 166 MHz |
I/O 类型: | COMMON | 交错的突发长度: | 1,2,4,8 |
JESD-30 代码: | R-PDSO-G86 | JESD-609代码: | e0 |
内存密度: | 67108864 bit | 内存集成电路类型: | SYNCHRONOUS DRAM |
内存宽度: | 32 | 湿度敏感等级: | 3 |
端子数量: | 86 | 字数: | 2097152 words |
字数代码: | 2000000 | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 2MX32 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSSOP | 封装等效代码: | TSSOP86,.46,20 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
峰值回流温度(摄氏度): | 260 | 电源: | 3.3 V |
认证状态: | Not Qualified | 刷新周期: | 4096 |
连续突发长度: | 1,2,4,8,FP | 最大待机电流: | 0.002 A |
子类别: | DRAMs | 最大压摆率: | 0.15 mA |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子节距: | 0.5 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4S643232H-TL70 | SAMSUNG |
获取价格 |
64Mb H-die (x32) SDRAM Specification | |
K4S643232H-UC50 | SAMSUNG |
获取价格 |
Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, | |
K4S643232H-UC500 | SAMSUNG |
获取价格 |
Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 INCH X 0.875 INCH, 0.50 MM PITCH, ROHS | |
K4S643232H-UC50T | SAMSUNG |
获取价格 |
Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 INCH X 0.875 INCH, 0.50 MM PITCH, ROHS | |
K4S643232H-UC550 | SAMSUNG |
获取价格 |
Synchronous DRAM, 2MX32, 5ns, CMOS, PDSO86, 0.400 INCH X 0.875 INCH, 0.50 MM PITCH, ROHS C | |
K4S643232H-UC600 | SAMSUNG |
获取价格 |
Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH X 0.875 INCH, 0.50 MM PITCH, ROHS | |
K4S643232H-UC60T | SAMSUNG |
获取价格 |
Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH X 0.875 INCH, 0.50 MM PITCH, ROHS | |
K4S643232H-UC70 | SAMSUNG |
获取价格 |
Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, | |
K4S643232H-UC700 | SAMSUNG |
获取价格 |
Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH X 0.875 INCH, 0.50 MM PITCH, ROHS | |
K4S643232H-UL50T | SAMSUNG |
获取价格 |
Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86 |