Datasheet > K4S56323LF-FC60

K4S56323LF-FC60

更新时间： 2023-05-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
12页	141K
描述
Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90

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数据手册

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K4S56323LF-FC60 数据手册

K4S56323LF - F(H)E/N/S/C/L/R

Mobile-SDRAM

2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

FEATURES

GENERAL DESCRIPTION

• VDD/VDDQ = 2.5V/2.5V

The K4S56323LF is 268,435,456 bits synchronous high data

rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits,

fabricated with SAMSUNG’s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

formance memory system applications.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (4K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• Extended Temperature Operation (-25°C ~ 85°C).

• 90Balls FBGA ( -FXXX -Pb, -HXXX -Pb Free).

ORDERING INFORMATION

Part No.

Max Freq.

Interface

Package

K4S56323LF-F(H)E/N/S/C/L/R60

K4S56323LF-F(H)E/N/S/C/L/R75

K4S56323LF-F(H)E/N/S/C/L/R1H

K4S56323LF-F(H)E/N/S/C/L/R1L

166MHz(CL=3)

133MHz(CL=3),111MHz(CL=2)

111MHz(CL=2)

90 FBGA Pb

(Pb Free)

LVCMOS

111MHz(CL=3)*1

- F(H)E/N/S : Normal/Low/Super Low Power, Extended Temperature(-25°C ~ 85°C)

- F(H)C/L/R : Normal/Low/Super Low Power, Commercial Temperature(-25°C ~ 70°C)

NOTES :

1. In case of 40MHz Frequency, CL1 can be supported.

2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.

Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific pur

pose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

May 2004

12 3 4 5 6 7...12

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与K4S56323LF-FC60相关器件

型号	品牌	获取价格	描述	数据表
K4S56323LF-FC600	SAMSUNG	获取价格	Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, FBGA-90
K4S56323LF-FC75	SAMSUNG	获取价格	Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90
K4S56323LF-FE	SAMSUNG	获取价格	2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S56323LF-FE1L	SAMSUNG	获取价格	Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90
K4S56323LF-FE1L0	SAMSUNG	获取价格	Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, FBGA-90
K4S56323LF-FE75	SAMSUNG	获取价格	Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90
K4S56323LF-FE750	SAMSUNG	获取价格	Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90
K4S56323LF-FL60	SAMSUNG	获取价格	Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90
K4S56323LF-FL600	SAMSUNG	获取价格	Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, FBGA-90
K4S56323LF-FL750	SAMSUNG	获取价格	Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90

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