Datasheet > K4M563233E-MF1L0

K4M563233E-MF1L0

更新时间： 2024-02-23 23:02:23

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器内存集成电路
页数	文件大小	规格书
12页	141K
描述
Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, FBGA-90

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技术参数
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K4M563233E-MF1L0 技术参数

生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	LFBGA,	针数：	90
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.32.00.24	风险等级：	5.83
访问模式：	FOUR BANK PAGE BURST	最长访问时间：	7 ns
其他特性：	AUTO/SELF REFRESH	JESD-30 代码：	R-PBGA-B90
长度：	13 mm	内存密度：	268435456 bit
内存集成电路类型：	SYNCHRONOUS DRAM	内存宽度：	32
功能数量：	1	端口数量：	1
端子数量：	90	字数：	8388608 words
字数代码：	8000000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：	-25 °C
组织：	8MX32	封装主体材料：	PLASTIC/EPOXY
封装代码：	LFBGA	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE, FINE PITCH	认证状态：	Not Qualified
座面最大高度：	1.4 mm	自我刷新：	YES
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	2.7 V
标称供电电压 (Vsup)：	3 V	表面贴装：	YES
技术：	CMOS	温度等级：	OTHER
端子形式：	BALL	端子节距：	0.8 mm
端子位置：	BOTTOM	宽度：	11 mm
Base Number Matches：	1

K4M563233E-MF1L0 数据手册

K4M563233E - M(E)E/N/G/C/L/F

Mobile-SDRAM

2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

FEATURES

GENERAL DESCRIPTION

• 3.0V & 3.3V power supply.

The K4M563233E is 268,435,456 bits synchronous high data

rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits,

fabricated with SAMSUNG’s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

formance memory system applications.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (4K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• Extended Temperature Operation (-25°C ~ 85°C).

• 2Chips DDP 90Balls FBGA with 0.8mm ball pitch

( -MXXX : Leaded, -EXXX : Lead Free).

ORDERING INFORMATION

Part No.

Max Freq.

Interface

Package

K4M563233E-M(E)E/N/G/C/L/F75

K4M563233E-M(E)E/N/G/C/L/F80

K4M563233E-M(E)E/N/G/C/L/F1H

K4M563233E-M(E)E/N/G/C/L/F1L

133MHz(CL=3)

125MHz(CL=3)

105MHz(CL=2)

90 FBGA

Leaded (Lead Free)

LVCMOS

105MHz(CL=3)^*1

- M(E)E/N/G : Normal / Low / Low Power, Extended Temperature(-25°C ~ 85°C)

- M(E)C/L/F : Normal / Low / Low Power, Commercial Temperature(-25°C ~ 70°C)

NOTES :

1. In case of 40MHz Frequency, CL1 can be supported.

2. Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic

DRAM" for use as components in general and scientific computers such as, by way of example, mainframes, servers, work stations or desk top

computers for the first three years of five year term of this license. Nothing herein limits the rights of Samsung to use Multi-Die Plastic DRAM in other

products or other applications under paragrangh such as mobile, telecom or non-computer application(which include by way of example laptop or

notebook computers, cell phones, televisions or visual monitors)

Violation may subject the customer to legal claims and also excludes any warranty against infringement from Samsung."

3. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.

Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific

purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

February 2004

12 3 4 5 6 7...12

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与K4M563233E-MF1L0相关器件

型号	品牌	描述	获取价格	数据表
K4M563233E-MG1H	SAMSUNG	Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90	获取价格
K4M563233E-MG75	SAMSUNG	Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90	获取价格
K4M563233E-MG800	SAMSUNG	Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90	获取价格
K4M563233E-ML1H0	SAMSUNG	Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, FBGA-90	获取价格
K4M563233E-ML1L	SAMSUNG	Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90	获取价格
K4M563233E-ML1L0	SAMSUNG	Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, FBGA-90	获取价格

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