Datasheet > K4F640412D-JP450

K4F640412D-JP450

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器光电二极管
页数	文件大小	规格书
20页	171K
描述
Fast Page DRAM, 16MX4, 45ns, CMOS, PDSO32,

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K4F640412D-JP450 数据手册

Industrial Temperature

K4F660412D,K4F640412D

CMOS DRAM

AC CHARACTERISTICS (Continued)

-45

-50

-60

Parameter

Symbol

Units

Note

Min

Max

Min

Max

Min

Max

Refresh period (Normal)

tREF

tWCS

tCWD

tRWD

tAWD

tCPWD

tCSR

tCHR

tRPC

tCPA

tPC

Refresh period (L-ver)

128

Write command set-up time

CAS to W delay time

RAS to W delay time

Column address toW delay time

CAS precharge W delay time

CAS set-up time (CAS -before-RAS refresh)

CAS hold time (CAS -before-RAS refresh)

RAS to CAS precharge time

Access time from CAS precharge

Fast Page mode cycle time

Fast Page mode read-modify-write cycle time

CAS precharge time (Fast page cycle)

RAS pulse width (Fast page cycle)

RAS hold time from CAS precharge

OE access time

tPRWC

tC P

tRASP

tRHCP

tOEA

tOED

tOEZ

tOEH

tWTS

tWTH

tWRP

tWRH

tRASS

tRPS

tCHS

200K

OE to data delay

Output buffer turn off delay time from OE

OE command hold time

100

-50

100

-50

Write command set-up time (Test mode in)

Write command hold time (Test mode in)

W to RAS precharge time (C-B-R refresh)

W to RAS hold time (C-B-R refresh)

RAS pulse width (C-B-R self refresh)

RAS precharge time (C-B-R self refresh)

CAS hold time (C-B-R self refresh)

100

110

-50

13,14,15

1...3 4 567 8 9...20

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