5秒后页面跳转
K4F640412C-JL600 PDF预览

K4F640412C-JL600

更新时间: 2024-02-14 17:18:43
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
20页 367K
描述
Fast Page DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

K4F640412C-JL600 技术参数

生命周期:Obsolete零件包装代码:SOJ
包装说明:SOJ,针数:32
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.71
访问模式:FAST PAGE最长访问时间:60 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESHJESD-30 代码:R-PDSO-J32
长度:20.96 mm内存密度:67108864 bit
内存集成电路类型:FAST PAGE DRAM内存宽度:4
功能数量:1端口数量:1
端子数量:32字数:16777216 words
字数代码:16000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:16MX4封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
座面最大高度:3.76 mm自我刷新:YES
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL宽度:10.16 mm
Base Number Matches:1

K4F640412C-JL600 数据手册

 浏览型号K4F640412C-JL600的Datasheet PDF文件第1页浏览型号K4F640412C-JL600的Datasheet PDF文件第2页浏览型号K4F640412C-JL600的Datasheet PDF文件第3页浏览型号K4F640412C-JL600的Datasheet PDF文件第5页浏览型号K4F640412C-JL600的Datasheet PDF文件第6页浏览型号K4F640412C-JL600的Datasheet PDF文件第7页 
K4F660412C,K4F640412C  
CMOS DRAM  
DC AND OPERATING CHARACTERISTICS (Continued)  
Max  
Symbol  
Power  
Speed  
Units  
K4F660412C  
K4F640412C  
-45  
-50  
-60  
90  
80  
70  
120  
110  
100  
mA  
mA  
mA  
ICC1  
ICC2  
ICC3  
Don¢t care  
Normal  
L
1
1
1
1
mA  
mA  
Don¢t care  
-45  
-50  
-60  
90  
80  
70  
120  
110  
100  
mA  
mA  
mA  
Don¢t care  
Don¢t care  
-45  
-50  
-60  
70  
60  
50  
70  
60  
50  
mA  
mA  
mA  
ICC4  
ICC5  
ICC6  
Normal  
L
0.5  
200  
0.5  
200  
mA  
uA  
Don¢t care  
-45  
-50  
-60  
120  
110  
100  
120  
110  
100  
mA  
mA  
mA  
Don¢t care  
ICC7  
ICCS  
L
L
Don¢t care  
Don¢t care  
350  
350  
350  
350  
uA  
uA  
ICC1* : Operating Current (RAS and CAS, Address cycling @tRC=min.)  
ICC2 : Standby Current (RAS=CAS=W=VIH)  
ICC3* : RAS-only Refresh Current (CAS=VIH, RAS, Address cycling @tRC=min.)  
ICC4* : Fast Page Mode Current (RAS=VIL, CAS, Address cycling @tPC=min.)  
ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V)  
ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min)  
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode  
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, CAS=CAS-before-RAS cycling or 0.2V,  
W, OE=VIH, Address=Don¢t care, DQ=Open, TRC=31.25us  
ICCS : Self Refresh Current  
RAS=CAS=0.2V, W=OE=A0 ~ A12(A11)=VCC-0.2V or 0.2V, DQ0 ~ DQ3=VCC-0.2V, 0.2V or Open  
*Note :  
ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.  
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,  
address can be changed maximum once within one fast page mode cycle time, tPC.  

与K4F640412C-JL600相关器件

型号 品牌 描述 获取价格 数据表
K4F640412C-TC60 SAMSUNG Fast Page DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

获取价格

K4F640412C-TC600 SAMSUNG Fast Page DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

获取价格

K4F640412C-TL45 SAMSUNG Fast Page DRAM, 16MX4, 45ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

获取价格

K4F640412C-TL450 SAMSUNG Fast Page DRAM, 16MX4, 45ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

获取价格

K4F640412D SAMSUNG 16M x 4bit CMOS Dynamic RAM with Fast Page Mode

获取价格

K4F640412D-JC60 SAMSUNG Fast Page DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

获取价格