Datasheet > K4E640812D-TL45

K4E640812D-TL45

更新时间： 2023-03-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器光电二极管
页数	文件大小	规格书
21页	416K
描述
EDO DRAM, 8MX8, 45ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

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K4E640812D-TL45 数据手册

K4E660812D,K4E640812D

CMOS DRAM

DC AND OPERATING CHARACTERISTICS (Continued)

Max

Symbol

Power

Speed

Units

K4E660812D

K4E640812D

-45

-50

-60

120

110

100

ICC1

ICC2

ICC3

Don¢t care

Normal

Don¢t care

-45

-50

-60

120

110

100

Don¢t care

-45

-50

-60

100

ICC4

ICC5

ICC6

Normal

0.5

200

0.5

200

Don¢t care

-45

-50

-60

120

110

100

120

110

100

Don¢t care

ICC7

ICCS

Don¢t care

350

ICC1* : Operating Current (RAS and CAS, Address cycling @tRC=min.)

ICC2 : Standby Current (RAS=CAS=W=VIH)

ICC3* : RAS-only Refresh Current (CAS=VIH, RAS cycling @tRC=min.)

ICC4* : Extended Data Out Mode Current (RAS=VIL, CAS, Address cycling @tHPC=min.)

ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V)

ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min)

ICC7 : Battery back-up current, Average power supply current, Battery back-up mode

Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, CAS=CAS-before-RAS cycling or 0.2V

W, OE=VIH, Address=Don¢t care, DQ=Open, TRC=31.25us

ICCS : Self Refresh Current

RAS=CAS=0.2V, W=OE=A0 ~ A12(A11)=VCC-0.2V or 0.2V, DQ0 ~ DQ7=VCC-0.2V, 0.2V or Open

*Note :

ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.

ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,

address can be changed maximum once within one EDO mode cycle time, tHPC.

1 2 345 6 7...21

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