Datasheet > K2611SB

K2611SB

更新时间： 2022-04-01 10:12:23

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稳先微 - WINSEMI		/
页数	文件大小	规格书
7页	703K
描述
Silicon N-Channel MOSFET

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K2611SB 数据手册

K2611SB

Electrical Characteristics(Tc=25℃)

Characteristics

Symbol

I_GSS

Test Condition

V_GS=±30V,V_DS=0V

I_G=±10 µA,V_DS=0V

V_DS=720V,V_GS=0V

I_D=10mA,V_GS=0V

V_DS=10V,I_D=1mA

V_GS=10V,I_D=4.5A

V_DS=15V,I_D=4.5A

V_DS=25V,

Min Type Max Unit

Gate leakage current

±10

Gate-source breakdown voltage

Drain cut -off current

V_(BR)GSS

I_DSS

±30

100

µA

Drain -source breakdown voltage

Gate threshold voltage

Drain -source ON resistance

Forward Transconductance

Input capacitance

V_(BR)DSS

V_GS(th)

R_DS(ON)

gfs

900

1.1

7.0

2040

190

1.35

Ω

3.0

C_iss

V_GS=0V,

Reverse transfer capacitance

Output capacitance

C_rss

f=1MHz

C_oss

Rise time

V_DD=400V,

I_D=9A

Turn-on time

Switching time

ton

R_G=100Ω

Fall time

(Note4,5)

Turn-off time

Total gate charge(gate-source

plus gate-drain)

toff

V_DD=400V,

V_GS=10V,

I_D=9A

Gate-source charge

Qgs

Qgd

(Note4,5)

Gate-drain("miller") Charge

Source-Drain Ratings and Characteristics(Ta=25℃)

Characteristics

Symbol Test Condition

Min Type Max Unit

Continuous drain reverse current

Pulse drain reverse current

Forward voltage(diode)

Reverse recovery time

I_DR

I_DRP

V_DSF

trr

1.4

I_DR=9A,V_GS=0V

I_DR=9A,V_GS=0V,

dI_DR/ dt =100 A / µs

1.6

µC

Reverse recovery charge

Qrr

Note 1.Repeativity rating :pulse width limited by junction temperature

2.L=15mH I_AS=9A,V_DD=90V,R_G=25Ω,Starting T_J=25℃

3.I_SD≤9A,di/dt≤200A/us,V_DD<BV_DSS,STARTING T_J=25℃

4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%

5. Essentially independent of operating temperature.

This transistor is an electrostatic sensitive device

Please handle with caution

2/7

Steady, keep you advance

123 4 5 6 7

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