JX040S3
JieJie Microelectronics CO. , Ltd.
FIG.1 Maximum power dissipation versus
FIG.2: RMS on-state current versus case
RMS on-state current
temperature
I
T(RMS)(A)
P(W)
8
4.5
4
83℃
7
6
5
4
3
2
1
0
3.5
3
2.5
2
1.5
1
0.5
0
0
1
2
3
4
5
0
25
50
75
100
125
IT(RMS)(A)
TC(℃)
FIG.3: Surge peak on-state current versus
FIG.4: On-state characteristics
number of cycles
I
TM(A)
ITSM(A)
100
10
1
45
Tj=25℃ typ
Tj=25℃ max
Tj=125℃ typ
T =25℃,tp=10ms,one cycle,half‐sine
c
40
35
30
25
20
15
10
5
0.1
0
0
0.5
1
1.5
VTM(V)
2
2.5
3
1.E+0
1.E+1
1.E+2
1.E+3
1.E+4
1.E+5
Number of cycles
FIG.5: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp<10ms, and corresponding value of I2t
(dI/dt<50A/μs)
FIG.6: Relative variations of gate
triggercurrent, holding current and latching
current versus junction temperature
I
TSM(A), I2t(A2s)
I
GT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)
2.5
2
IGT
1000
100
10
IL&IH
ITSM
1.5
1
dI/dt
I2t
0.5
0
1
0.01
0.1
1
10
‐40
‐20
0
20
40
60
80
100
120
140
Tj(℃)
tp(ms)
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http://www.jjwdz.com
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