JST24F-1200BW
JieJie MicroelectronicsCO. , Ltd.
FIG.1 Maximum power dissipation versus RMS
FIG.2: RMS on-state current versus case
on-state current
temperature
I
T(RMS)(A)
P(W)
30
25
20
15
10
5
45
40
35
30
25
20
15
10
5
72℃
0
0
0
5
10
15
20
25
30
0
25
50
75
100
125
IT(RMS)(A)
TC(℃)
FIG.3: Surge peak on-state current versus
FIG.4: On-state characteristics
number of cycles
ITM(A)
ITSM(A)
300
Tj=25℃ typ
Tj=25℃ max
Tj=125℃ typ
T =25℃,tp=20ms,one cycle,sine
c
100
250
200
150
100
50
10
1
0
0
0.5
1
1.5
TM(V)
2
2.5
3
1.E+0
1.E+1
1.E+2
1.E+3
1.E+4
1.E+5
V
Number of cycles
FIG.5: Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<20ms, and
corresponding value of I2t (dI/dt<100A/μs)
FIG.6: Relative variations of gate trigger
current, holding current and latching
current versus junction temperature
ITSM(A), I2t(A2s)
I
GT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)
10000
3
2.5
2
IGT(I/II)&IH
IGT(III)
IL
ITSM
1000
100
10
dI/dt
I2t
1.5
1
0.5
0
1
0.01
0.1
1
10
‐40
‐20
0
20
40
Tj(℃)
60
80
100
120
140
tp(ms)
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