Datasheet > JST16E-1200TW

JST16E-1200TW

更新时间： 2022-12-29 20:02:01

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页数	文件大小	规格书
7页	346K
描述
With high ability to withstand the shock loading of large current, JST16 series triacs provide high dv/dt rate

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数据手册

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JST16E-1200TW 数据手册

JST16 Series

JieJie Microelectronics CO. , Ltd

I²t value for fusing (tp=10ms)

I²t

128

A²s

Critical rate of rise of on-state current

(I_G=2×I_GT)

dI/dt

A/μs

Peak gate current

I_GM

P_G(AV)

P_GM

Average gate power dissipation

Peak gate power

ELECTRICAL CHARACTERISTICS (T_j=25℃unless otherwise specified)

3 Quadrants

Value

Symbol

Test Condition

Quadrant

Unit

CW SW TW

I_GT

Ⅰ-Ⅱ-Ⅲ

MAX

1.3

V_D=12V R_L=33Ω

V_GT

V_D=V_DRMT_j=125℃

R_L=3.3KΩ

V_GD

Ⅰ-Ⅱ-Ⅲ

MIN

0.2

Ⅰ-Ⅲ

I_L

MAX

I_G=1.2I_GT

Ⅱ

I_H

I_T=100mA

MAX

MIN

dV/dt

V_D=2/3V_DRMGate Open T_j=125℃

1000 500 200 100 V/μs

4 Quadrants

Value

Unit

Symbol

Test Condition

Quadrant

Ⅰ-Ⅱ-Ⅲ

Ⅳ

I_GT

MAX

V_D=12V R_L=33Ω

V_GT

V_GD

ALL

MAX

MIN

1.5

0.2

V_D=V_DRMT_j=125℃

R_L=3.3KΩ

ALL

Ⅰ-Ⅲ-Ⅳ

100

I_L

MAX

I_G=1.2I_GT

Ⅱ

I_H

I_T=100mA

MAX

MIN

dV/dt

V_D=2/3V_DRMGate Open T_j=125℃

500

200

V/μs

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