Datasheet > JST16E-1200CW

JST16E-1200CW

更新时间： 2022-12-29 20:02:01

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捷捷微 - JJM		/
页数	文件大小	规格书
7页	346K
描述
With high ability to withstand the shock loading of large current, JST16 series triacs provide high dv/dt rate

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JST16E-1200CW 数据手册

JST16 Series

JieJie Microelectronics CO. , Ltd

FIG.1 Maximum power dissipation versus RMS

FIG.2: RMS on-state current versus case

on-state current

temperature

IT(RMS) (A)

P(w)

α=180°

TO-220B

(Non-Ins)

TO-263

TO-220F(Ins)

TO-220A(Ins)

IT(RMS) (A)

Tc (℃)

100

125

FIG.3: Surge peak on-state current versus

FIG.4: On-state characteristics (maximum

number of cycles

values)

I^TM(A)

I^TSM(A)

200

160

120

t=20ms

One cycle

100

Tj=Tjmax

Tj=25℃

V^TM(V)

Number of cycles

10 100

1000

FIG.6: Relative variations of gate trigger current,

holding current and latching current versus

junction temperature

FIG.5: Non-repetitive surge peak on-state current

for a sinusoidal pulse with width tp<20ms, and

corresponging value of I²t (dI/dt < 50A/μs)

I^TSM(A), I²t (A²s)

I^GT,IH,IL(Tj) /IGT,IH,IL(Tj=25℃)

3.0

2000

1000

100

2.5

2.0

ITSM

IGT

I²t

1.5

1.0

dI/dt

I^H&IL

0.5

0.0

Tj (℃)

40 60

tp(ms)

-40

-20

100 120 140

0.01

0.1

10 20

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