JST12E-1200BW
JieJie Microelectronics Co., Ltd.
FIG.1 Maximum power dissipation versus RMS
FIG.2: RMS on-state current versus case
on-state current
temperature
IT(RMS)(A)
14
P(W)
25
103℃
12
20
15
10
5
10
8
6
4
2
0
0
0
2
4
6
8
10
12
14
0
25
50
75
100
125
I
T(RMS)(A)
TC(℃)
FIG.3: RMS on-state current versus ambient
temperature (printed circuit board FR4,copper
thickness:35μm)(full cycle)
FIG.4: Surge peak on-state current versus
number of cycles
IT(RMS)(A)
ITSM(A)
3
140
Tc=25℃,tp=20ms,one cycle,sine
120
100
80
60
40
20
0
2.5
2
1.5
1
0.5
0
1.E+0
1.E+1
1.E+2
1.E+3
1.E+4
1.E+5
0
25
50
75
100
125
Number of cycles
Ta(℃)
FIG.5: On-state characteristics
FIG.6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp<20ms, and corresponging value of I2t
SHNCDJDFKVFKPJDFGPSDJFPAJFJOFJOJS
OPGJOPRJGJOSDHSDHHHSEHUISHFSUIH
(dI/dt<100A/μs)
ITSM(A), I2t(A2s)
ITM(A)
Tj=25℃ typ
Tj=25℃ max
1000
100
ITSM
dI/dt
Tj=125℃ typ
100
10
1
I2t
10
1
0
0.5
1
1.5
VTM(V)
2
2.5
3
3.5
0.01
0.1
1
10
tp(ms)
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http://www.jjwdz.com
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