JST12E-1200BW
JieJie Microelectronics Co., Ltd.
Peak pulse voltage
(Tj=25℃; non-repetitive,off-state;FIG.8)
Vpp
4.5
kV
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Symbol
IGT
Test Condition
Quadrant
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅱ-Ⅲ
Value
Unit
mA
V
MAX.
MAX.
50
1
VD =12V RL =33Ω
VGT
VD =VDRM Tj =125℃
RL =3.3KΩ
VGD
Ⅰ-Ⅱ-Ⅲ
MIN.
0.2
V
Ⅰ-Ⅲ
70
90
50
500
20
5
IL
MAX.
mA
IG =1.2IGT
Ⅱ
IH
dV/dt
(dI/dt)c
ton
IT =500mA
MAX.
MIN.
MIN.
mA
V/μs
A/ms
VD=800V Gate Open Tj =125℃
(dV/dt)c=20V/μs Tj=125℃
IG=80mA IA=400mA IR=40mA
TYP.
μs
Tj=25℃
toff
50
STATIC CHARACTERISTICS
Symbol
Parameter
ITM =17A tp=380μs
Value(MAX.)
Unit
V
VTM
VTO
RD
Tj=25℃
Tj=125℃
Tj=125℃
Tj=25℃
Tj=125℃
1.5
0.78
37
Threshold voltage
Dynamic resistance
V
mΩ
μA
mA
IDRM
IRRM
10
VD =VDRM VR =VRRM
2
THERMAL RESISTANCES
Symbol
Parameter
junction to case (AC)
junction to ambient (AC, in free air, S=2cm2)
Value
1.3
Unit
℃/W
℃/W
Rth(j-c)
Rth(j-a)
45
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http://www.jjwdz.com
2