JST12A-1000C
JieJie Microelectronics Co., Ltd.
FIG.1 Maximum power dissipation versus RMS
FIG.2: RMS on-state current versus case
on-state current
temperature
IT(RMS)(A)
14
P(W)
25
87℃
12
20
15
10
5
10
8
6
4
2
0
0
0
2
4
6
8
10
12
14
0
25
50
75
100
125
I
T(RMS)(A)
TC(℃)
FIG.3: Surge peak on-state current versus
FIG.4: On-state characteristics
number of cycles
I
TM(A)
ITSM(A)
140
120
100
80
Tc=25℃,tp=20ms,one cycle,sine
Tj=25℃ typ
Tj=25℃ max
Tj=125℃ typ
100
10
1
60
40
20
0
1.E+0
1.E+1
1.E+2
1.E+3
1.E+4
1.E+5
0
1
2
3
4
5
Number of cycles
V
TM(V)
FIG.5: Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<20ms, and
corresponding value of I2t (Ⅰ-Ⅱ: dI/dt<80A/μs;
Ⅲ-Ⅳ: dI/dt<40A/μs)
FIG.6: Relative variations of gate trigger
current, holding current and latching
current versus junction temperature
ITSM(A), I2t(A2s)
I
GT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)
IGT(I/II/III)
3
2.5
2
dI/dt(I/II)
1000
IGT(IV)
IH
ITSM
dI/dt(III/IV)
IL
I2t
100
10
1
1.5
1
0.5
0
‐40
‐20
0
20
40
60
80
100
120
140
0.01
0.1
1
10
Tj(℃)
tp(ms)
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http://www.jjwdz.com
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