Datasheet > JSKT136/22

JSKT136/22

更新时间： 2023-12-06 19:45:31

品牌	Logo	应用领域
捷捷微 - JJM		可控硅
页数	文件大小	规格书
4页	538K
描述
可控硅模块

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JSKT136/22 数据手册

FIG.3:Forward characteristics

FIG.4: Relative variations of gate trigger current, holding

(per thyristor or diode)

current and latching current versus junction temperature

IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)

IT(A)/IF(A)

500

400

300

200

100

3.0

2.5

2.0

IGT

T_J=125℃

1.5

IH&IL

1.0

0.5

VT(V)/VF(V)

1.0

Tj(℃)

0.0

0.5

1.5

2.0

-40 -20

80 100 120 140

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Semiconductor Co., Ltd. assumes no responsibility for the consequences of use without

consideration for such information nor use beyond it.

Information mentioned in this document is subject to change without notice, apart from that when

an agreement is signed, JieJie complies with the agreement.

Products and information provided in this document have no infringement of patents. JieJie

assumes no responsibility for any infringement of other rights of third parties which may result

from the use of such products and information.

This document is the 0.6th version which is made in 5-Aug.-2022. This document supersedes

and replaces all information previously supplied.

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