Datasheet > JSKT150/16

JSKT150/16

更新时间： 2023-12-06 20:11:02

品牌	Logo	应用领域
捷捷微 - JJM		可控硅
页数	文件大小	规格书
4页	537K
描述
可控硅模块

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数据手册

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JSKT150/16 数据手册

Rev.2.4 Aug. 5 2022

JSKT150/JSKH150

Description

1) A package of series of two chips.

2) With high thermal conductivity DBC as the insulation.

3) Welding by vacuum welding technology, which provide high reliability.

Typical Application

DC motor control, temperature control and light control system.

Absolute Maximum Ratings (Packaged into modules, unless otherwise specified, T_CASE=25℃)

Values

Parameter

Test Conditions

Symbol

Unit

Operating junction temperature range

Storage temperature range

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Non-repetitive peak off-state voltage

Non-repetitive peak reverse voltage

Average on-state current

T_j

T_stg

-40~125

℃

-40~125

T_j=25℃

V_DRM

V_RRM

V_DSM

V_RSM

I_T(AV)/I_F(AV)

I_TSM/I_FSM

I²t

1200 1600 1800

1300 1700 1900

150

T_j=25℃

T_C=85℃

Peak on-state surge current

I²t value for fusing

t_P=10ms V_R=0.6V_RRM

I_G=2×I_GT

3000

45000

A²s

A/μs

Critical rate of rise of on-state current

Insulation voltage

dI/dt

150

3600/3000

A.C 50Hz(1s/1min)

V_ISO

Electrical Characteristics (Packaged into modules, unless otherwise specified, T_CASE=25℃)

Parameter

Peak on-state voltage

Test Conditions

I_T=450A t_P=380μs

T_j=125℃

Symbol

V_TM

Values

≤1.8

Unit

Threshold voltage

Dynamic resistance

V_TO

≤1.05

≤1.7

T_j=125℃

R_d

mΩ

VD=VDRM

TC=25℃

I_DRM1

I_DRM2

≤100

≤50

μA

Repetitive peak off-state current

TC=125℃

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