Datasheet > JOR25XHD6

JOR25XHD6

更新时间： 2023-12-06 20:11:05

品牌	Logo	应用领域
捷捷微 - JJM		继电器
页数	文件大小	规格书
10页	1905K
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光继电器

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JOR25XHD6 数据手册

JOR258HD6 Series

JieJie Microelectronics Co., Ltd.

DIP6, 1 Form A 1500V High Sensitivity PhotoMOS Relay

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

Rating

UNIT

Forward Current

Reverse Voltage

Junction Temperature

Power Dissipation

Input

125

°C

Load voltage (peak AC)

Continuous load current

Peak load current

1500

°C

Output

Ipeak

Junction Temperature

Output Power Dissipation

Total Power Dissipation

Isolation Voltage

125

360

Vrms

°C

Ptot

Viso

Topr

Tsig

Tsol

400

(Note 1)

(Note 2)

5000

-40〜+110

-55〜+150

260

Operating Temperature

Storage Temperature

Soldering Temperature

°C

Note: Ambient temperature = 25°C, unless otherwise specified. Stresses exceeding the absolute maximum ratings

can cause permanent damage to the device. Exposure to absolute maximum ratings for long periods of time

can adversely affect reliability.

Note 1: AC For 1 Minute, R.H. = 40 ~ 60%

Isolation voltage shall be measured using the following method.

(1) Short between anode and cathode on the primary side and between collector and emitter on the

secondary side.

(2) The isolation voltage tester with zero-cross circuit shall be used.

(3) The waveform of applied voltage shall be a sine wave.

Note 2: For 10 Seconds

RECOMMENDED OPERATION CONDITIONS

CHARACTERISTICS

SYMBOL

MIN.

MAX.

UNIT

LED Forward Current

Load voltage (Peak AC)

Continuous load current

1200

JOR258HD6

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this

product, please confirm specified characteristics shown in this document.

http://www.jjwdz.com

TEL：+86-513-83639777

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