Datasheet > JMSH1516PE

JMSH1516PE

更新时间： 2025-09-15 19:53:51

品牌	Logo	应用领域
捷捷微 - JJM		GSM
页数	文件大小	规格书
7页	1246K
描述
JJM Package:TO-263-3L; Confi- guration:N; Status:Active; VDSMax (V):150; IDMax (A):65; VGS(th)Typ (V):3.1; RDS(ON)Typ @ VGS 10V (mÎ©):15; RDS(ON)Max @ VGS 10V (mÎ©):19; VGSMax (V):±20; EASMax (mJ):294; CissTyp (pF):1346; CossTyp (pF):211; CrssTyp (pF):18; QgTyp (nC):19; With ESD:No; FOM:285;

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数据手册

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JMSH1516PE 数据手册

150V, 65A, 15mΩ N-channel Power SGT MOSFET

JMSH1516PE

Product Summary

Features



Excellent R_DS(ON)and Low Gate Charge

Parameters

V_DSS

Value

150

3.1

Unit

100% UIS Tested

100% ΔVds Tested

V_{GS(th)_Typ}

Halogen-free; RoHS-compliant

I_D(@V_GS=10V)

R_{DS(ON)_Typ}(@V_GS=10V

Applications



Load Switch

PWM Application

Power Management

Schematic Diagram

TO-263-3L Top View

Pin Assignment

Ordering Information

Device

Per Carton

Package

Marking

MSL

Form

Reel(pcs)

(pcs)

JMSH1516PE

TO-263-3L

SH1516P

Tape&Reel

800

4000

Absolute Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Value

Symbol

Unit

V_DS

V_GS

Drain-to-Source Voltage

Gate-to-Source Voltage

150

±20

T_C= 25°C

I_D

Continuous Drain Current

Pulsed Drain Current ⁽¹⁾

T_C= 100°C

I_DM

Refer to Fig.4

294

Single Pulsed Avalanche Energy ⁽²⁾

T_C= 25°C

T_C= 100°C

Junction & Storage Temperature Range

E_AS

179

P_D

Power Dissipation

T_J, T_STG

-55 to 150

°C

Thermal Characteristics

Parameter

Thermal Resistance, Junction to Ambient⁽³⁾

Max

Symbol

Unit

R_θJA

°C/W

R_θJC

Thermal Resistance, Junction to Case

0.7

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REV 1.0 | 1/7

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