JMSH2010BC
JMSH2010BE
200V 9.1mN-Ch Power MOSFET
Product Summary
Features
•
•
•
•
•
Ultra-low ON-resistance, RDS(ON)
Parameter
VDS
Value
Unit
V
200
3.3
129
9.1
Low Gate Charge, Qg
VGS(th)_Typ
ID (@ VGS = 10V) (1)
V
100% UIS and Rg Tested
Pb-free Lead Plating
A
RDS(ON)_Typ (@ VGS = 10V)
m
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Management in Computing, CE, IE 4.0, Communications
Current Switching in DC/DC & AC/DC (SR) Sub-systems
Load Switching, Quick/Wireless Charging, Motor Driving
TO-220-3L Top View
TO-263-3L Top View
D
D
G
G
D
S
G
S
S
Ordering Information
Device
TJ (°C)
Package
TO-220-3L
TO-263-3L
# of Pins
Marking
SH2010B
SH2010B
MSL
NA
1
Media
Tube
Quantity (pcs)
JMSH2010BC-U
JMSH2010BE-13
3
3
-55 to 175
-55 to 175
50
13-inch Reel
800
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
200
±20
VGS
V
TC = 25°C
129
Continuous Drain
Current (1)
ID
A
TC = 100°C
91
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
517
A
A
41
EAS
841
mJ
TC = 25°C
500
Power Dissipation (4)
PD
W
TC = 100°C
Junction & Storage Temperature Range
250
TJ, TSTG
-55 to 175
°C
R
DS(ON) vs. VGS
Gate Charge
50
40
30
20
10
0
10
VDS = 100V
ID = 20A
ID = 20A
8
6
4
2
0
0
5
10
VGS (V)
15
20
0
10
20
30
Qg (nC)
40
50
Jiangsu JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.3
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