Datasheet > JFG182N30K

JFG182N30K

更新时间： 2025-09-17 20:01:47

品牌	Logo	应用领域
君芯科技 - CAS-JUNSHINE		/
页数	文件大小	规格书
10页	1984K
描述
Product Type :Discrete; Product status :Released; Technology :SGT; Package :DFN3*3;

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JFG182N30K 数据手册

JFG182N30K

Description

30V N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

Application

• Device Rating V_DS= 30V, I_D= 182A

• R_DS(ON)=2.1mΩ (typ.) @ V_GS= 10V, I_D= 30A

• SGT Technology

• DC-DC converters for server and telecommunications

• Power delivery for V-core, ASIC, DDR, GPU, VGA and

system components

• 100% avalanche test

• Point-of-Load (POL) modules

• Qualified according to JEDEC for target

applications

• Secondary-side synchronous rectification

• Voltage regulator modules (VRM)

• Brushed and brushless motor control

• RoHS Compliant & Halogen-Free

Package

DFN 3.3*3.3-8L

JFG182N30K

Absolute Maximum Ratings T_C=25℃ unless otherwise specified

Symbol

V_DS

Parameter

Value

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

182

T_C= 25℃

I_D

Continuous Drain Current, VGS @ 10V ^note1

T_C= 100℃

115

I_DM

P_D

Pulsed Drain Current ^note2

308

Power Dissipation ^note4

T_C= 25℃

T_A= 25℃

125

Power Dissipation

2.08

103

E_AS

Single Pulsed Avalanche Energy ^note3

Thermal Resistance, Junction to Case ^note1

℃/W

℃

R_θJC

1.0

R_θJA

Junction to Ambient (mounted on 1 inch square PCB)

Operating and Storage Temperature Range

T_J, T_STG

-55 to +150

Address: Floor 5, D2 Building, No. 200, Linghu Blvd., Wuxi, Jiangsu, China

Version: 1.0

-1

12 3 4 5 6 7...10

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